Emission behavior of nm-thick Al2O3 film-based planar cold cathodes for electronic cooling

Myoung Bok Lee; Sung Ho Hahm; Jung Hee Lee; Yoon Ho Song

doi:10.1063/1.1894593

Emission behavior of nm-thick Al₂O₃ film-based planar cold cathodes for electronic cooling

Myoung Bok Lee, Sung Ho Hahm, Jung Hee Lee, Yoon Ho Song

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have fabricated and investigated the emission characteristics of planar cold cathodes which are appropriate for the electronic cooling devices by atomically depositing ultrathin Al2 O3 films onto the indium-tin-oxide-coated glass. A diode-type test indicated prominent emission behaviors, such as a low threshold field of 3-5 Vμm for planar cold cathodes and the nonuniform luminescence intensity with localized distribution of emission spots. We propose a resonant Fowler-Nordheim tunneling of electrons transported via the Frenkel traps with a well depth of φB =0.8-0.9 eV in nm-thick Al2 O3 films as a key process for the extraordinary emission properties of Al2 O3 film-based planar cold cathodes.

Original language	English
Article number	123511
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	12
DOIs	https://doi.org/10.1063/1.1894593
State	Published - 21 Mar 2005

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title = "Emission behavior of nm-thick Al2O3 film-based planar cold cathodes for electronic cooling",

abstract = "We have fabricated and investigated the emission characteristics of planar cold cathodes which are appropriate for the electronic cooling devices by atomically depositing ultrathin Al2 O3 films onto the indium-tin-oxide-coated glass. A diode-type test indicated prominent emission behaviors, such as a low threshold field of 3-5 Vμm for planar cold cathodes and the nonuniform luminescence intensity with localized distribution of emission spots. We propose a resonant Fowler-Nordheim tunneling of electrons transported via the Frenkel traps with a well depth of φB =0.8-0.9 eV in nm-thick Al2 O3 films as a key process for the extraordinary emission properties of Al2 O3 film-based planar cold cathodes.",

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AU - Lee, Myoung Bok

AU - Hahm, Sung Ho

AU - Lee, Jung Hee

AU - Song, Yoon Ho

PY - 2005/3/21

Y1 - 2005/3/21

N2 - We have fabricated and investigated the emission characteristics of planar cold cathodes which are appropriate for the electronic cooling devices by atomically depositing ultrathin Al2 O3 films onto the indium-tin-oxide-coated glass. A diode-type test indicated prominent emission behaviors, such as a low threshold field of 3-5 Vμm for planar cold cathodes and the nonuniform luminescence intensity with localized distribution of emission spots. We propose a resonant Fowler-Nordheim tunneling of electrons transported via the Frenkel traps with a well depth of φB =0.8-0.9 eV in nm-thick Al2 O3 films as a key process for the extraordinary emission properties of Al2 O3 film-based planar cold cathodes.

AB - We have fabricated and investigated the emission characteristics of planar cold cathodes which are appropriate for the electronic cooling devices by atomically depositing ultrathin Al2 O3 films onto the indium-tin-oxide-coated glass. A diode-type test indicated prominent emission behaviors, such as a low threshold field of 3-5 Vμm for planar cold cathodes and the nonuniform luminescence intensity with localized distribution of emission spots. We propose a resonant Fowler-Nordheim tunneling of electrons transported via the Frenkel traps with a well depth of φB =0.8-0.9 eV in nm-thick Al2 O3 films as a key process for the extraordinary emission properties of Al2 O3 film-based planar cold cathodes.

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ER -

Emission behavior of nm-thick Al₂O₃ film-based planar cold cathodes for electronic cooling

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