Engineering oxygen vacancy of tunnel barrier and switching layer for both selectivity and reliability of selector-less ReRAM

Sangheon Lee; Daeseok Lee; Jiyong Woo; Euijun Cha; Jaesung Park; Hyunsang Hwang

doi:10.1109/LED.2014.2347925

Engineering oxygen vacancy of tunnel barrier and switching layer for both selectivity and reliability of selector-less ReRAM

Sangheon Lee
, Daeseok Lee
, Jiyong Woo
, Euijun Cha
, Jaesung Park
, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The resistive switching behaviors of selector-less resistive random access memory (ReRAM) have been extensively investigated to eliminate the tradeoff between selectivity and reliability. To achieve excellent selectivity, reliability should be sacrificed, and vice versa. The reason for this tradeoff is the narrow read operation margin of ReRAM having high selectivity. Therefore, the role of each layer has been analyzed and engineered to satisfy both selectivity and reliability requirements of the ReRAM. In the selector-less ReRAM, oxygen vacancies of the switching layer control set voltage for achieving high read operation margin, whereas oxygen vacancies of the tunnel barrier control selectivity.

Original language	English
Article number	6891220
Pages (from-to)	1022-1024
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	10
DOIs	https://doi.org/10.1109/LED.2014.2347925
State	Published - 1 Oct 2014

Keywords

reliability
ReRAM
selectivity

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10.1109/LED.2014.2347925

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title = "Engineering oxygen vacancy of tunnel barrier and switching layer for both selectivity and reliability of selector-less ReRAM",

abstract = "The resistive switching behaviors of selector-less resistive random access memory (ReRAM) have been extensively investigated to eliminate the tradeoff between selectivity and reliability. To achieve excellent selectivity, reliability should be sacrificed, and vice versa. The reason for this tradeoff is the narrow read operation margin of ReRAM having high selectivity. Therefore, the role of each layer has been analyzed and engineered to satisfy both selectivity and reliability requirements of the ReRAM. In the selector-less ReRAM, oxygen vacancies of the switching layer control set voltage for achieving high read operation margin, whereas oxygen vacancies of the tunnel barrier control selectivity.",

keywords = "reliability, ReRAM, selectivity",

author = "Sangheon Lee and Daeseok Lee and Jiyong Woo and Euijun Cha and Jaesung Park and Hyunsang Hwang",

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AU - Lee, Sangheon

AU - Lee, Daeseok

AU - Woo, Jiyong

AU - Cha, Euijun

AU - Park, Jaesung

AU - Hwang, Hyunsang

PY - 2014/10/1

Y1 - 2014/10/1

N2 - The resistive switching behaviors of selector-less resistive random access memory (ReRAM) have been extensively investigated to eliminate the tradeoff between selectivity and reliability. To achieve excellent selectivity, reliability should be sacrificed, and vice versa. The reason for this tradeoff is the narrow read operation margin of ReRAM having high selectivity. Therefore, the role of each layer has been analyzed and engineered to satisfy both selectivity and reliability requirements of the ReRAM. In the selector-less ReRAM, oxygen vacancies of the switching layer control set voltage for achieving high read operation margin, whereas oxygen vacancies of the tunnel barrier control selectivity.

AB - The resistive switching behaviors of selector-less resistive random access memory (ReRAM) have been extensively investigated to eliminate the tradeoff between selectivity and reliability. To achieve excellent selectivity, reliability should be sacrificed, and vice versa. The reason for this tradeoff is the narrow read operation margin of ReRAM having high selectivity. Therefore, the role of each layer has been analyzed and engineered to satisfy both selectivity and reliability requirements of the ReRAM. In the selector-less ReRAM, oxygen vacancies of the switching layer control set voltage for achieving high read operation margin, whereas oxygen vacancies of the tunnel barrier control selectivity.

KW - reliability

KW - ReRAM

KW - selectivity

UR - https://www.scopus.com/pages/publications/84907661107

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JF - IEEE Electron Device Letters

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ER -

Engineering oxygen vacancy of tunnel barrier and switching layer for both selectivity and reliability of selector-less ReRAM

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Keywords

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