Enhanced field emission from the ZnO nanowires by hydrogen gas exposure

Hoon Sik Jang; Sung Oong Kang; Seung Hoon Nahm; Do Hyung Kim; Hyeong Rag Lee; Yong Il Kim

doi:10.1016/j.matlet.2006.07.098

Enhanced field emission from the ZnO nanowires by hydrogen gas exposure

Hoon Sik Jang, Sung Oong Kang, Seung Hoon Nahm, Do Hyung Kim, Hyeong Rag Lee, Yong Il Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

ZnO nanowires (ZNWs) were synthesized on Co-coated Si wafer via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction and transmission electron microscopy investigations show that these ZNWs present a high-quality single-crystalline hexagonal structure. Field emission (FE) characteristics of the ZNWs film were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm² is about 3.9 V/μm. The field enhancement factor was determined to be ∼ 1180 for ZNWs film. Exposure of H₂ during FE causes a permanent increase in the FE current and a decrease in the turn-on field. Also, the field enhancement factor γ was finally increased from 1180 ± 20 to 1510 ± 20 after FE saturation.

Original language	English
Pages (from-to)	1679-1682
Number of pages	4
Journal	Materials Letters
Volume	61
Issue number	8-9
DOIs	https://doi.org/10.1016/j.matlet.2006.07.098
State	Published - Apr 2007

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title = "Enhanced field emission from the ZnO nanowires by hydrogen gas exposure",

abstract = "ZnO nanowires (ZNWs) were synthesized on Co-coated Si wafer via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction and transmission electron microscopy investigations show that these ZNWs present a high-quality single-crystalline hexagonal structure. Field emission (FE) characteristics of the ZNWs film were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm2 is about 3.9 V/μm. The field enhancement factor was determined to be ∼ 1180 for ZNWs film. Exposure of H2 during FE causes a permanent increase in the FE current and a decrease in the turn-on field. Also, the field enhancement factor γ was finally increased from 1180 ± 20 to 1510 ± 20 after FE saturation.",

author = "Jang, {Hoon Sik} and Kang, {Sung Oong} and Nahm, {Seung Hoon} and Kim, {Do Hyung} and Lee, {Hyeong Rag} and Kim, {Yong Il}",

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TY - JOUR

T1 - Enhanced field emission from the ZnO nanowires by hydrogen gas exposure

AU - Jang, Hoon Sik

AU - Kang, Sung Oong

AU - Nahm, Seung Hoon

AU - Kim, Do Hyung

AU - Lee, Hyeong Rag

AU - Kim, Yong Il

PY - 2007/4

Y1 - 2007/4

N2 - ZnO nanowires (ZNWs) were synthesized on Co-coated Si wafer via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction and transmission electron microscopy investigations show that these ZNWs present a high-quality single-crystalline hexagonal structure. Field emission (FE) characteristics of the ZNWs film were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm2 is about 3.9 V/μm. The field enhancement factor was determined to be ∼ 1180 for ZNWs film. Exposure of H2 during FE causes a permanent increase in the FE current and a decrease in the turn-on field. Also, the field enhancement factor γ was finally increased from 1180 ± 20 to 1510 ± 20 after FE saturation.

AB - ZnO nanowires (ZNWs) were synthesized on Co-coated Si wafer via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction and transmission electron microscopy investigations show that these ZNWs present a high-quality single-crystalline hexagonal structure. Field emission (FE) characteristics of the ZNWs film were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm2 is about 3.9 V/μm. The field enhancement factor was determined to be ∼ 1180 for ZNWs film. Exposure of H2 during FE causes a permanent increase in the FE current and a decrease in the turn-on field. Also, the field enhancement factor γ was finally increased from 1180 ± 20 to 1510 ± 20 after FE saturation.

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DO - 10.1016/j.matlet.2006.07.098

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VL - 61

SP - 1679

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JO - Materials Letters

JF - Materials Letters

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Enhanced field emission from the ZnO nanowires by hydrogen gas exposure

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