Enhanced field emission from the ZnO nanowires by hydrogen gas exposure

Hoon Sik Jang; Sung Oong Kang; Seung Hoon Nahm; Do Hyung Kim; Hyeong Rag Lee; Yong Il Kim

doi:10.1016/j.matlet.2006.07.098

Enhanced field emission from the ZnO nanowires by hydrogen gas exposure

Hoon Sik Jang
, Sung Oong Kang
, Seung Hoon Nahm
, Do Hyung Kim
, Hyeong Rag Lee
, Yong Il Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

ZnO nanowires (ZNWs) were synthesized on Co-coated Si wafer via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction and transmission electron microscopy investigations show that these ZNWs present a high-quality single-crystalline hexagonal structure. Field emission (FE) characteristics of the ZNWs film were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm² is about 3.9 V/μm. The field enhancement factor was determined to be ∼ 1180 for ZNWs film. Exposure of H₂ during FE causes a permanent increase in the FE current and a decrease in the turn-on field. Also, the field enhancement factor γ was finally increased from 1180 ± 20 to 1510 ± 20 after FE saturation.

Original language	English
Pages (from-to)	1679-1682
Number of pages	4
Journal	Materials Letters
Volume	61
Issue number	8-9
DOIs	https://doi.org/10.1016/j.matlet.2006.07.098
State	Published - Apr 2007

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10.1016/j.matlet.2006.07.098

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title = "Enhanced field emission from the ZnO nanowires by hydrogen gas exposure",

abstract = "ZnO nanowires (ZNWs) were synthesized on Co-coated Si wafer via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction and transmission electron microscopy investigations show that these ZNWs present a high-quality single-crystalline hexagonal structure. Field emission (FE) characteristics of the ZNWs film were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm2 is about 3.9 V/μm. The field enhancement factor was determined to be ∼ 1180 for ZNWs film. Exposure of H2 during FE causes a permanent increase in the FE current and a decrease in the turn-on field. Also, the field enhancement factor γ was finally increased from 1180 ± 20 to 1510 ± 20 after FE saturation.",

author = "Jang, \{Hoon Sik\} and Kang, \{Sung Oong\} and Nahm, \{Seung Hoon\} and Kim, \{Do Hyung\} and Lee, \{Hyeong Rag\} and Kim, \{Yong Il\}",

year = "2007",

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doi = "10.1016/j.matlet.2006.07.098",

language = "English",

volume = "61",

pages = "1679--1682",

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TY - JOUR

T1 - Enhanced field emission from the ZnO nanowires by hydrogen gas exposure

AU - Jang, Hoon Sik

AU - Kang, Sung Oong

AU - Nahm, Seung Hoon

AU - Kim, Do Hyung

AU - Lee, Hyeong Rag

AU - Kim, Yong Il

PY - 2007/4

Y1 - 2007/4

N2 - ZnO nanowires (ZNWs) were synthesized on Co-coated Si wafer via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction and transmission electron microscopy investigations show that these ZNWs present a high-quality single-crystalline hexagonal structure. Field emission (FE) characteristics of the ZNWs film were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm2 is about 3.9 V/μm. The field enhancement factor was determined to be ∼ 1180 for ZNWs film. Exposure of H2 during FE causes a permanent increase in the FE current and a decrease in the turn-on field. Also, the field enhancement factor γ was finally increased from 1180 ± 20 to 1510 ± 20 after FE saturation.

AB - ZnO nanowires (ZNWs) were synthesized on Co-coated Si wafer via a carbon thermal reduction vapor transport method. Scanning electron microscopy, X-ray diffraction and transmission electron microscopy investigations show that these ZNWs present a high-quality single-crystalline hexagonal structure. Field emission (FE) characteristics of the ZNWs film were measured. A low turn-on voltage for driving a current density of 0.1 μA/cm2 is about 3.9 V/μm. The field enhancement factor was determined to be ∼ 1180 for ZNWs film. Exposure of H2 during FE causes a permanent increase in the FE current and a decrease in the turn-on field. Also, the field enhancement factor γ was finally increased from 1180 ± 20 to 1510 ± 20 after FE saturation.

UR - https://www.scopus.com/pages/publications/33847686826

U2 - 10.1016/j.matlet.2006.07.098

DO - 10.1016/j.matlet.2006.07.098

M3 - Article

AN - SCOPUS:33847686826

SN - 0167-577X

VL - 61

SP - 1679

EP - 1682

JO - Materials Letters

JF - Materials Letters

IS - 8-9

ER -

Enhanced field emission from the ZnO nanowires by hydrogen gas exposure

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