Enhanced Switching Reliability of Sol–Gel-Processed Y2O3 RRAM Devices Based on Y2O3 Surface Roughness-Induced Local Electric Field
- Do Won Kim
- , Hyeon Joong Kim
- , Won Yong Lee
- , Kyoungdu Kim
- , Sin Hyung Lee
- , Jin Hyuk Bae
- , In Man Kang
- , Kwangeun Kim
- , Jaewon Jang
Research output: Contribution to journal › Article › peer-review
23
Scopus
citations