@inproceedings{fee4eb5865fd4f8b81cdfc31c92070dc,
title = "Enhanced UV-visible rejection ratio in an MSM UV photodetector fabricated on N-face GaN by thermal annealing effects",
abstract = "We investigated a thermal annealing effect on N-face GaN with electrical and optical characteristics. We used Al Schottky electrodes for the formation of Al-N bonding. The dark current level increased after an annealing at low temperatures below 673 K while it decreased after annealing at 773 K. It was found that the AlN barrier was formed by thermal annealing at 773 K. In the spectral photo-responsivity characteristics, the maximum responsivity decreased and UV/visible rejection ratio was significantly improved with annealing at 773 K.",
keywords = "GaN, N-face, Photodetector, Thermal Annealing, UV",
author = "Lee, {Chang Ju} and Kwon, {Young Jin} and Cha, {Hyun Gu} and Hahm, {Sung Ho}",
year = "2012",
doi = "10.1109/EDSSC.2012.6482830",
language = "English",
isbn = "9781467356961",
series = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",
booktitle = "2012 IEEE International Conference on Electron Devices and Solid State Circuit, EDSSC 2012",
note = "2012 8th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2012 ; Conference date: 03-12-2012 Through 05-12-2012",
}