Enhancement-mode 130 nm InAs p-HEMTs having f T of 403 GHz and f max of 470 GHz fabricated using atomic-layer-etching technology

T. W. Kim; D. H. Kim; S. D. Park; S. H. Shin; G. Y. Yeom; J. H. Jang; J. I. Song

doi:10.1109/DRC.2008.4800807

Enhancement-mode 130 nm InAs p-HEMTs having f _T of 403 GHz and f _max of 470 GHz fabricated using atomic-layer-etching technology

T. W. Kim
, D. H. Kim
, S. D. Park
, S. H. Shin
, G. Y. Yeom
, J. H. Jang
, J. I. Song

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Original language	English
Title of host publication	66th DRC Device Research Conference Digest, DRC 2008
Pages	211-212
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2008.4800807
State	Published - 2008
Event	66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States Duration: 23 Jun 2008 → 25 Jun 2008

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	66th DRC Device Research Conference Digest, DRC 2008
Country/Territory	United States
City	Santa Barbara, CA
Period	23/06/08 → 25/06/08

Access to Document

10.1109/DRC.2008.4800807

Cite this

Kim, T. W., Kim, D. H., Park, S. D., Shin, S. H., Yeom, G. Y., Jang, J. H., & Song, J. I. (2008). Enhancement-mode 130 nm InAs p-HEMTs having f _T of 403 GHz and f _max of 470 GHz fabricated using atomic-layer-etching technology. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 211-212). Article 4800807 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800807

@inproceedings{66d45b1e29e94f608426d1739d366d4a,

title = "Enhancement-mode 130 nm InAs p-HEMTs having f T of 403 GHz and f max of 470 GHz fabricated using atomic-layer-etching technology",

author = "Kim, \{T. W.\} and Kim, \{D. H.\} and Park, \{S. D.\} and Shin, \{S. H.\} and Yeom, \{G. Y.\} and Jang, \{J. H.\} and Song, \{J. I.\}",

year = "2008",

doi = "10.1109/DRC.2008.4800807",

language = "English",

isbn = "9781424419425",

series = "Device Research Conference - Conference Digest, DRC",

pages = "211--212",

booktitle = "66th DRC Device Research Conference Digest, DRC 2008",

note = "66th DRC Device Research Conference Digest, DRC 2008 ; Conference date: 23-06-2008 Through 25-06-2008",

}

Kim, TW, Kim, DH, Park, SD, Shin, SH, Yeom, GY, Jang, JH & Song, JI 2008, Enhancement-mode 130 nm InAs p-HEMTs having f _T of 403 GHz and f _max of 470 GHz fabricated using atomic-layer-etching technology. in 66th DRC Device Research Conference Digest, DRC 2008., 4800807, Device Research Conference - Conference Digest, DRC, pp. 211-212, 66th DRC Device Research Conference Digest, DRC 2008, Santa Barbara, CA, United States, 23/06/08. https://doi.org/10.1109/DRC.2008.4800807

Enhancement-mode 130 nm InAs p-HEMTs having f _T of 403 GHz and f _max of 470 GHz fabricated using atomic-layer-etching technology. / Kim, T. W.; Kim, D. H.; Park, S. D. et al.
66th DRC Device Research Conference Digest, DRC 2008. 2008. p. 211-212 4800807 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Enhancement-mode 130 nm InAs p-HEMTs having f T of 403 GHz and f max of 470 GHz fabricated using atomic-layer-etching technology

AU - Kim, T. W.

AU - Kim, D. H.

AU - Park, S. D.

AU - Shin, S. H.

AU - Yeom, G. Y.

AU - Jang, J. H.

AU - Song, J. I.

PY - 2008

Y1 - 2008

UR - https://www.scopus.com/pages/publications/64949143964

U2 - 10.1109/DRC.2008.4800807

DO - 10.1109/DRC.2008.4800807

M3 - Conference contribution

AN - SCOPUS:64949143964

SN - 9781424419425

T3 - Device Research Conference - Conference Digest, DRC

SP - 211

EP - 212

BT - 66th DRC Device Research Conference Digest, DRC 2008

T2 - 66th DRC Device Research Conference Digest, DRC 2008

Y2 - 23 June 2008 through 25 June 2008