Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

Y. Kwon, Y. Li, Y. W. Heo, M. Jones, P. H. Holloway, D. P. Norton, Z. V. Park, S. Li

Research output: Contribution to journalArticlepeer-review

206 Scopus citations

Abstract

The synthesis and characterization of thin-film field-effect transistor (FET) with phosphorus-doped (Zn,Mg)O for the active layer was investigated. An enhancement mode device that display an on/off ratio of 10 3 and a channel mobility on the order of 5 cm 2/V s, was realized. Gate dielectric served as HfO 2i. The control of the initial channel conductance was improved by the use of acceptor doping, while having a minimal impact on channel mobility.

Original languageEnglish
Pages (from-to)2685-2687
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number14
DOIs
StatePublished - 5 Apr 2004

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