Abstract
The synthesis and characterization of thin-film field-effect transistor (FET) with phosphorus-doped (Zn,Mg)O for the active layer was investigated. An enhancement mode device that display an on/off ratio of 10 3 and a channel mobility on the order of 5 cm 2/V s, was realized. Gate dielectric served as HfO 2i. The control of the initial channel conductance was improved by the use of acceptor doping, while having a minimal impact on channel mobility.
Original language | English |
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Pages (from-to) | 2685-2687 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 14 |
DOIs | |
State | Published - 5 Apr 2004 |