Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

Y. Kwon; Y. Li; Y. W. Heo; M. Jones; P. H. Holloway; D. P. Norton; Z. V. Park; S. Li

doi:10.1063/1.1695437

Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

Y. Kwon
, Y. Li
, Y. W. Heo
, M. Jones
, P. H. Holloway
, D. P. Norton
, Z. V. Park
, S. Li

University of Florida

Research output: Contribution to journal › Article › peer-review

206 Scopus citations

Abstract

The synthesis and characterization of thin-film field-effect transistor (FET) with phosphorus-doped (Zn,Mg)O for the active layer was investigated. An enhancement mode device that display an on/off ratio of 10 ³ and a channel mobility on the order of 5 cm ²/V s, was realized. Gate dielectric served as HfO _2i. The control of the initial channel conductance was improved by the use of acceptor doping, while having a minimal impact on channel mobility.

Original language	English
Pages (from-to)	2685-2687
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	14
DOIs	https://doi.org/10.1063/1.1695437
State	Published - 5 Apr 2004

Access to Document

10.1063/1.1695437

Cite this

@article{731b9ced924b48fd944470485a062202,

title = "Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel",

abstract = "The synthesis and characterization of thin-film field-effect transistor (FET) with phosphorus-doped (Zn,Mg)O for the active layer was investigated. An enhancement mode device that display an on/off ratio of 10 3 and a channel mobility on the order of 5 cm 2/V s, was realized. Gate dielectric served as HfO 2i. The control of the initial channel conductance was improved by the use of acceptor doping, while having a minimal impact on channel mobility.",

author = "Y. Kwon and Y. Li and Heo, \{Y. W.\} and M. Jones and Holloway, \{P. H.\} and Norton, \{D. P.\} and Park, \{Z. V.\} and S. Li",

year = "2004",

month = apr,

day = "5",

doi = "10.1063/1.1695437",

language = "English",

volume = "84",

pages = "2685--2687",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

AU - Kwon, Y.

AU - Li, Y.

AU - Heo, Y. W.

AU - Jones, M.

AU - Holloway, P. H.

AU - Norton, D. P.

AU - Park, Z. V.

AU - Li, S.

PY - 2004/4/5

Y1 - 2004/4/5

N2 - The synthesis and characterization of thin-film field-effect transistor (FET) with phosphorus-doped (Zn,Mg)O for the active layer was investigated. An enhancement mode device that display an on/off ratio of 10 3 and a channel mobility on the order of 5 cm 2/V s, was realized. Gate dielectric served as HfO 2i. The control of the initial channel conductance was improved by the use of acceptor doping, while having a minimal impact on channel mobility.

AB - The synthesis and characterization of thin-film field-effect transistor (FET) with phosphorus-doped (Zn,Mg)O for the active layer was investigated. An enhancement mode device that display an on/off ratio of 10 3 and a channel mobility on the order of 5 cm 2/V s, was realized. Gate dielectric served as HfO 2i. The control of the initial channel conductance was improved by the use of acceptor doping, while having a minimal impact on channel mobility.

UR - https://www.scopus.com/pages/publications/2342540970

U2 - 10.1063/1.1695437

DO - 10.1063/1.1695437

M3 - Article

AN - SCOPUS:2342540970

SN - 0003-6951

VL - 84

SP - 2685

EP - 2687

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

Abstract

Access to Document

Other files and links

Fingerprint

Cite this