Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

Y. Kwon; Y. Li; Y. W. Heo; M. Jones; P. H. Holloway; D. P. Norton; Z. V. Park; S. Li

doi:10.1063/1.1695437

Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

Y. Kwon, Y. Li, Y. W. Heo, M. Jones, P. H. Holloway, D. P. Norton, Z. V. Park, S. Li

University of Florida

Research output: Contribution to journal › Article › peer-review

206 Scopus citations

Abstract

The synthesis and characterization of thin-film field-effect transistor (FET) with phosphorus-doped (Zn,Mg)O for the active layer was investigated. An enhancement mode device that display an on/off ratio of 10 ³ and a channel mobility on the order of 5 cm ²/V s, was realized. Gate dielectric served as HfO _2i. The control of the initial channel conductance was improved by the use of acceptor doping, while having a minimal impact on channel mobility.

Original language	English
Pages (from-to)	2685-2687
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	14
DOIs	https://doi.org/10.1063/1.1695437
State	Published - 5 Apr 2004

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title = "Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel",

abstract = "The synthesis and characterization of thin-film field-effect transistor (FET) with phosphorus-doped (Zn,Mg)O for the active layer was investigated. An enhancement mode device that display an on/off ratio of 10 3 and a channel mobility on the order of 5 cm 2/V s, was realized. Gate dielectric served as HfO 2i. The control of the initial channel conductance was improved by the use of acceptor doping, while having a minimal impact on channel mobility.",

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AU - Kwon, Y.

AU - Li, Y.

AU - Heo, Y. W.

AU - Jones, M.

AU - Holloway, P. H.

AU - Norton, D. P.

AU - Park, Z. V.

AU - Li, S.

PY - 2004/4/5

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N2 - The synthesis and characterization of thin-film field-effect transistor (FET) with phosphorus-doped (Zn,Mg)O for the active layer was investigated. An enhancement mode device that display an on/off ratio of 10 3 and a channel mobility on the order of 5 cm 2/V s, was realized. Gate dielectric served as HfO 2i. The control of the initial channel conductance was improved by the use of acceptor doping, while having a minimal impact on channel mobility.

AB - The synthesis and characterization of thin-film field-effect transistor (FET) with phosphorus-doped (Zn,Mg)O for the active layer was investigated. An enhancement mode device that display an on/off ratio of 10 3 and a channel mobility on the order of 5 cm 2/V s, was realized. Gate dielectric served as HfO 2i. The control of the initial channel conductance was improved by the use of acceptor doping, while having a minimal impact on channel mobility.

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JF - Applied Physics Letters

IS - 14

ER -

Enhancement-mode thin-film field-effect transistor using phosphorus-doped (Zn,Mg)O channel

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