@inproceedings{c4331d5504e7439f91702d37bb9240c4,
title = "Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament",
abstract = "In this paper, we outline the performance enhancement at low current (10 μA) introduced by implementing CBRAM devices were the solid electrolyte is made of two layers with different Cu mobility, enabling to form a hourglass-shaped conductive filament. With such a filament configuration, the CBRAM devices combine a large memory window with high writing speed (10 ns) and a write endurance of 106 cycles, for an operating current of 10 μA. We demonstrate that the filament can be reproduced by the quantum-point-contact model, revealing that the switching operation consists of the modulation of the dimensions of the filament constriction, which is continuous in both states, originating the optimal switching control at low current. The peculiar filament configuration is also proven to solve the voltage-time dilemma in this devices, enabling to combine fast low-voltage switching (3V, 10 ns) with an excellent immunity to voltage disturbs (>10 years at ±0.5V).",
keywords = "AlO, CBRAM, Conductive-bridging, low-current, QPC, RRAM, WO",
author = "Attilio Belmonte and Ludovic Goux and Jiyong Woo and Umberto Celano and Augusto Redolfi and Sergiu Clima and Kar, \{Gouri Sankar\}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 17th Non-Volatile Memory Technology Symposium, NVMTS 2017 ; Conference date: 30-08-2017 Through 01-09-2017",
year = "2017",
month = dec,
day = "8",
doi = "10.1109/NVMTS.2017.8171281",
language = "English",
series = "2017 17th Non-Volatile Memory Technology Symposium, NVMTS 2017 - Conference Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--5",
booktitle = "2017 17th Non-Volatile Memory Technology Symposium, NVMTS 2017 - Conference Proceedings",
address = "United States",
}