Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI)                         y                         (Bi                         2                         Te                         3                         )                         0.95−x                         (Bi                         2                         Se                         3                         )                         x                         (Bi                         2                         S                         3                         )                         0.05                          quaternary system

Hyunyong Cho; Song Yi Back; Jin Hee Kim; Omkaram Inturu; Ho Seong Lee; Jong Soo Rhyee

doi:10.1039/c8ra09280j

Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI) _y (Bi ₂ Te ₃ ) _0.95−x (Bi ₂ Se ₃ ) _x (Bi ₂ S ₃ ) _0.05 quaternary system

Hyunyong Cho, Song Yi Back, Jin Hee Kim, Omkaram Inturu, Ho Seong Lee, Jong Soo Rhyee

Research output: Contribution to journal › Article › peer-review

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Abstract

Bi ₂ Te ₃ -based compounds have received attention as thermoelectric materials for room-temperature cooling and waste heat recovery applications. With potential application prospects, quaternary compounds of Bi ₂ Te ₃ -Bi ₂ Se ₃ -Bi ₂ S ₃ composites can be used for mid-temperature power generation under 500 °C. Herein, we investigated the thermoelectric properties of (CuI) _y (Bi ₂ Te ₃ ) _0.95−x (Bi ₂ Se ₃ ) _x (Bi ₂ S ₃ ) _0.05 (x = 0.05, 0.2; y = 0.0, 0.003) compounds. Through X-ray diffraction and transmission electron microscopy, we confirmed that the lattice disorder in (Bi ₂ Te ₃ ) _0.95−x (Bi ₂ Se ₃ ) _x (Bi ₂ S ₃ ) _0.05 (x = 0.2) was due to multiple element substitutions. Disorder carrier scattering induced the localized nature of electrical resistivity, as confirmed by variable range hopping at low temperature. The temperature-dependent Seebeck coefficient of (Bi ₂ Te ₃ ) _0.95−x (Bi ₂ Se ₃ ) _x (Bi ₂ S ₃ ) _0.05 showed a carrier-type change from p- to n-type behaviour in the intermediate temperature range (525 K for x = 0.05 and 360 K for x = 0.2). Even though strong carrier localization increased electrical resistivity, resulting in degradation of the power factor and thermoelectric performance, when the chemical potential was increased to the conduction band minimum through CuI co-doping into the (CuI) _0.003 (Bi ₂ Te ₃ ) _0.95−x (Bi ₂ Se ₃ ) _x (Bi ₂ S ₃ ) _0.05 (x = 0.05, 0.2) compounds, the carriers were delocalized and showed n-type behaviour in the Seebeck coefficient. The temperature-dependent thermal conductivity shows the suppression of bipolar conduction behaviour. The simultaneous effect on carrier optimization through chemical potential tuning and lattice disorder caused a high ZT value of 0.85 at 523 K for CuI-doped (Bi ₂ Te ₃ ) _0.75 (Bi ₂ Se ₃ ) _0.2 (Bi ₂ S ₃ ) _0.05 , which was comparatively high for n-type thermoelectric materials in the mid-temperature range.

Original language	English
Pages (from-to)	4190-4197
Number of pages	8
Journal	RSC Advances
Volume	9
Issue number	8
DOIs	https://doi.org/10.1039/c8ra09280j
State	Published - 2019

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Cho, H., Back, S. Y., Kim, J. H., Inturu, O., Lee, H. S., & Rhyee, J. S. (2019). Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI) _y (Bi ₂ Te ₃ ) _0.95−x (Bi ₂ Se ₃ ) _x (Bi ₂ S ₃ ) _0.05 quaternary system RSC Advances, 9(8), 4190-4197. https://doi.org/10.1039/c8ra09280j

Cho, Hyunyong ; Back, Song Yi ; Kim, Jin Hee et al. / Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI) _y (Bi ₂ Te ₃ ) _0.95−x (Bi ₂ Se ₃ ) _x (Bi ₂ S ₃ ) _0.05 quaternary system In: RSC Advances. 2019 ; Vol. 9, No. 8. pp. 4190-4197.

@article{c52f2930b75d46ccab55a334e52a6b32,

title = " Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI) y (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 quaternary system ",

abstract = " Bi 2 Te 3 -based compounds have received attention as thermoelectric materials for room-temperature cooling and waste heat recovery applications. With potential application prospects, quaternary compounds of Bi 2 Te 3 -Bi 2 Se 3 -Bi 2 S 3 composites can be used for mid-temperature power generation under 500 °C. Herein, we investigated the thermoelectric properties of (CuI) y (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 (x = 0.05, 0.2; y = 0.0, 0.003) compounds. Through X-ray diffraction and transmission electron microscopy, we confirmed that the lattice disorder in (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 (x = 0.2) was due to multiple element substitutions. Disorder carrier scattering induced the localized nature of electrical resistivity, as confirmed by variable range hopping at low temperature. The temperature-dependent Seebeck coefficient of (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 showed a carrier-type change from p- to n-type behaviour in the intermediate temperature range (525 K for x = 0.05 and 360 K for x = 0.2). Even though strong carrier localization increased electrical resistivity, resulting in degradation of the power factor and thermoelectric performance, when the chemical potential was increased to the conduction band minimum through CuI co-doping into the (CuI) 0.003 (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 (x = 0.05, 0.2) compounds, the carriers were delocalized and showed n-type behaviour in the Seebeck coefficient. The temperature-dependent thermal conductivity shows the suppression of bipolar conduction behaviour. The simultaneous effect on carrier optimization through chemical potential tuning and lattice disorder caused a high ZT value of 0.85 at 523 K for CuI-doped (Bi 2 Te 3 ) 0.75 (Bi 2 Se 3 ) 0.2 (Bi 2 S 3 ) 0.05 , which was comparatively high for n-type thermoelectric materials in the mid-temperature range.",

author = "Hyunyong Cho and Back, {Song Yi} and Kim, {Jin Hee} and Omkaram Inturu and Lee, {Ho Seong} and Rhyee, {Jong Soo}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry.",

year = "2019",

doi = "10.1039/c8ra09280j",

language = "English",

volume = "9",

pages = "4190--4197",

journal = "RSC Advances",

issn = "2046-2069",

publisher = "Royal Society of Chemistry",

number = "8",

}

Cho, H, Back, SY, Kim, JH, Inturu, O, Lee, HS & Rhyee, JS 2019, ' Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI) _y (Bi ₂ Te ₃ ) _0.95−x (Bi ₂ Se ₃ ) _x (Bi ₂ S ₃ ) _0.05 quaternary system ', RSC Advances, vol. 9, no. 8, pp. 4190-4197. https://doi.org/10.1039/c8ra09280j

Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI) _y (Bi ₂ Te ₃ ) _0.95−x (Bi ₂ Se ₃ ) _x (Bi ₂ S ₃ ) _0.05 quaternary system . / Cho, Hyunyong; Back, Song Yi; Kim, Jin Hee et al.
In: RSC Advances, Vol. 9, No. 8, 2019, p. 4190-4197.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI) y (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 quaternary system

AU - Cho, Hyunyong

AU - Back, Song Yi

AU - Kim, Jin Hee

AU - Inturu, Omkaram

AU - Lee, Ho Seong

AU - Rhyee, Jong Soo

PY - 2019

Y1 - 2019

N2 - Bi 2 Te 3 -based compounds have received attention as thermoelectric materials for room-temperature cooling and waste heat recovery applications. With potential application prospects, quaternary compounds of Bi 2 Te 3 -Bi 2 Se 3 -Bi 2 S 3 composites can be used for mid-temperature power generation under 500 °C. Herein, we investigated the thermoelectric properties of (CuI) y (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 (x = 0.05, 0.2; y = 0.0, 0.003) compounds. Through X-ray diffraction and transmission electron microscopy, we confirmed that the lattice disorder in (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 (x = 0.2) was due to multiple element substitutions. Disorder carrier scattering induced the localized nature of electrical resistivity, as confirmed by variable range hopping at low temperature. The temperature-dependent Seebeck coefficient of (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 showed a carrier-type change from p- to n-type behaviour in the intermediate temperature range (525 K for x = 0.05 and 360 K for x = 0.2). Even though strong carrier localization increased electrical resistivity, resulting in degradation of the power factor and thermoelectric performance, when the chemical potential was increased to the conduction band minimum through CuI co-doping into the (CuI) 0.003 (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 (x = 0.05, 0.2) compounds, the carriers were delocalized and showed n-type behaviour in the Seebeck coefficient. The temperature-dependent thermal conductivity shows the suppression of bipolar conduction behaviour. The simultaneous effect on carrier optimization through chemical potential tuning and lattice disorder caused a high ZT value of 0.85 at 523 K for CuI-doped (Bi 2 Te 3 ) 0.75 (Bi 2 Se 3 ) 0.2 (Bi 2 S 3 ) 0.05 , which was comparatively high for n-type thermoelectric materials in the mid-temperature range.

AB - Bi 2 Te 3 -based compounds have received attention as thermoelectric materials for room-temperature cooling and waste heat recovery applications. With potential application prospects, quaternary compounds of Bi 2 Te 3 -Bi 2 Se 3 -Bi 2 S 3 composites can be used for mid-temperature power generation under 500 °C. Herein, we investigated the thermoelectric properties of (CuI) y (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 (x = 0.05, 0.2; y = 0.0, 0.003) compounds. Through X-ray diffraction and transmission electron microscopy, we confirmed that the lattice disorder in (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 (x = 0.2) was due to multiple element substitutions. Disorder carrier scattering induced the localized nature of electrical resistivity, as confirmed by variable range hopping at low temperature. The temperature-dependent Seebeck coefficient of (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 showed a carrier-type change from p- to n-type behaviour in the intermediate temperature range (525 K for x = 0.05 and 360 K for x = 0.2). Even though strong carrier localization increased electrical resistivity, resulting in degradation of the power factor and thermoelectric performance, when the chemical potential was increased to the conduction band minimum through CuI co-doping into the (CuI) 0.003 (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 (x = 0.05, 0.2) compounds, the carriers were delocalized and showed n-type behaviour in the Seebeck coefficient. The temperature-dependent thermal conductivity shows the suppression of bipolar conduction behaviour. The simultaneous effect on carrier optimization through chemical potential tuning and lattice disorder caused a high ZT value of 0.85 at 523 K for CuI-doped (Bi 2 Te 3 ) 0.75 (Bi 2 Se 3 ) 0.2 (Bi 2 S 3 ) 0.05 , which was comparatively high for n-type thermoelectric materials in the mid-temperature range.

UR - http://www.scopus.com/inward/record.url?scp=85061942519&partnerID=8YFLogxK

U2 - 10.1039/c8ra09280j

DO - 10.1039/c8ra09280j

M3 - Article

AN - SCOPUS:85061942519

SN - 2046-2069

VL - 9

SP - 4190

EP - 4197

JO - RSC Advances

JF - RSC Advances

IS - 8

ER -

Cho H, Back SY, Kim JH, Inturu O, Lee HS, Rhyee JS. Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI) _y (Bi ₂ Te ₃ ) _0.95−x (Bi ₂ Se ₃ ) _x (Bi ₂ S ₃ ) _0.05 quaternary system RSC Advances. 2019;9(8):4190-4197. doi: 10.1039/c8ra09280j

Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI) y (Bi 2 Te 3 ) 0.95−x (Bi 2 Se 3 ) x (Bi 2 S 3 ) 0.05 quaternary system

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Enhancement of thermoelectric properties over a wide temperature range by lattice disorder and chemical potential tuning in a (CuI) _y (Bi ₂ Te ₃ ) _0.95−x (Bi ₂ Se ₃ ) _x (Bi ₂ S ₃ ) _0.05 quaternary system