TY - JOUR
T1 - Enhancing Computing Capacity via Reconfigurable MoS2-Based Artificial Synapse with Dual Feature Strategy for Wide Reservoir Computing
AU - Lee, Hyeonji
AU - Oh, Jungyeop
AU - Ahn, Wonbae
AU - Kang, Mingu
AU - Park, Seohak
AU - Kim, Hyunmin
AU - Yoo, Seungsun
AU - Jang, Byung Chul
AU - Choi, Sung Yool
N1 - Publisher Copyright:
© 2024 Wiley-VCH GmbH.
PY - 2024
Y1 - 2024
N2 - Reservoir computing (RC) has garnered considerable interest owing to its uncomplicated network structure and minimal training costs. Nevertheless, the computing capacity of RC systems is limited by the material-dependent physical dynamics of reservoir devices. In this study, an efficient neuromorphic reservoir device with adjustable reservoir states, achieved through the development of an electrically tunable three-terminal charge trap memory, is introduced. This device utilizes molybdenum disulfide (MoS2) as the channel material and a perhydropolysilazane-based charge trap layer. Notably, the absence of a tunneling layer in the device structure enables dynamic resistive switching, characterized by outstanding endurance and an excellent memory window. Furthermore, by implementing a simple input decay and refresh scheme, a reconfigurable neuromorphic device capable of multiple feature extraction and functioning as an artificial synapse is developed. The device's efficacy is validated through device-to-system-level simulations within a hardware-based wide RC (WRC) system, resulting in an improved recognition rate in the MNIST hand-written digit recognition task from 87.6% to 91.0%, a testament to the enhanced computing capacity. This strategic approach advances the development of hardware-based WRC systems, marking a significant step toward energy-efficient reservoir computing.
AB - Reservoir computing (RC) has garnered considerable interest owing to its uncomplicated network structure and minimal training costs. Nevertheless, the computing capacity of RC systems is limited by the material-dependent physical dynamics of reservoir devices. In this study, an efficient neuromorphic reservoir device with adjustable reservoir states, achieved through the development of an electrically tunable three-terminal charge trap memory, is introduced. This device utilizes molybdenum disulfide (MoS2) as the channel material and a perhydropolysilazane-based charge trap layer. Notably, the absence of a tunneling layer in the device structure enables dynamic resistive switching, characterized by outstanding endurance and an excellent memory window. Furthermore, by implementing a simple input decay and refresh scheme, a reconfigurable neuromorphic device capable of multiple feature extraction and functioning as an artificial synapse is developed. The device's efficacy is validated through device-to-system-level simulations within a hardware-based wide RC (WRC) system, resulting in an improved recognition rate in the MNIST hand-written digit recognition task from 87.6% to 91.0%, a testament to the enhanced computing capacity. This strategic approach advances the development of hardware-based WRC systems, marking a significant step toward energy-efficient reservoir computing.
KW - charge trap memory
KW - molybdenum disulfide (MoS)
KW - perhydropolysilazane (PHPS)
KW - reconfigurable synapse
KW - wide reservoir computing
UR - http://www.scopus.com/inward/record.url?scp=85213024547&partnerID=8YFLogxK
U2 - 10.1002/adfm.202416811
DO - 10.1002/adfm.202416811
M3 - Article
AN - SCOPUS:85213024547
SN - 1616-301X
JO - Advanced Functional Materials
JF - Advanced Functional Materials
ER -