Epitaxial and oriented YMnO3 film growth by pulsed laser deposition

J. Dho; C. W. Leung; J. L. MacManus-Driscoll; M. G. Blamire

doi:10.1016/j.jcrysgro.2004.04.028

Epitaxial and oriented YMnO₃ film growth by pulsed laser deposition

J. Dho, C. W. Leung, J. L. MacManus-Driscoll, M. G. Blamire

Department of Physics

University of Cambridge

Research output: Contribution to journal › Article › peer-review

86 Scopus citations

Abstract

We have studied the crystal growth behavior of multiferroic YMnO ₃ films synthesized by pulsed laser deposition on several different substrates. The growth orientation and surface morphology of YMnO₃ films were sensitively dependent on the substrates and deposition conditions. An excellent epitaxial hexagonal YMnO₃ film was grown on the (111) Y-stabilized ZrO₂ substrate, but with increasing the oxygen pressure few percentage of 30° twin growth was developed. On the other hand, the YMnO₃ film on the Si substrate with an amorphous SiO₂ layer exhibited (0001) or (112̄1) orientation. The (0001) oriented hexagonal YMnO₃ phase was a stable one under tensile stress by the (0001) Al₂O₃ substrate, while it competed with the (011)-oriented orthorhombic YMnO₃ phase under the compressive stress by the (111) SrTiO₃ substrate.

Original language	English
Pages (from-to)	548-553
Number of pages	6
Journal	Journal of Crystal Growth
Volume	267
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.04.028
State	Published - 1 Jul 2004

Keywords

A1. X-ray diffraction
A3. Laser epitaxy
B1. Oxides
B2. Dielectric materials

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10.1016/j.jcrysgro.2004.04.028

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@article{f9986efb1bf447e99963f36c6947d283,

title = "Epitaxial and oriented YMnO3 film growth by pulsed laser deposition",

abstract = "We have studied the crystal growth behavior of multiferroic YMnO 3 films synthesized by pulsed laser deposition on several different substrates. The growth orientation and surface morphology of YMnO3 films were sensitively dependent on the substrates and deposition conditions. An excellent epitaxial hexagonal YMnO3 film was grown on the (111) Y-stabilized ZrO2 substrate, but with increasing the oxygen pressure few percentage of 30° twin growth was developed. On the other hand, the YMnO3 film on the Si substrate with an amorphous SiO2 layer exhibited (0001) or (11{\=2}1) orientation. The (0001) oriented hexagonal YMnO3 phase was a stable one under tensile stress by the (0001) Al2O3 substrate, while it competed with the (011)-oriented orthorhombic YMnO3 phase under the compressive stress by the (111) SrTiO3 substrate.",

keywords = "A1. X-ray diffraction, A3. Laser epitaxy, B1. Oxides, B2. Dielectric materials",

author = "J. Dho and Leung, {C. W.} and MacManus-Driscoll, {J. L.} and Blamire, {M. G.}",

year = "2004",

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doi = "10.1016/j.jcrysgro.2004.04.028",

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TY - JOUR

T1 - Epitaxial and oriented YMnO3 film growth by pulsed laser deposition

AU - Dho, J.

AU - Leung, C. W.

AU - MacManus-Driscoll, J. L.

AU - Blamire, M. G.

PY - 2004/7/1

Y1 - 2004/7/1

N2 - We have studied the crystal growth behavior of multiferroic YMnO 3 films synthesized by pulsed laser deposition on several different substrates. The growth orientation and surface morphology of YMnO3 films were sensitively dependent on the substrates and deposition conditions. An excellent epitaxial hexagonal YMnO3 film was grown on the (111) Y-stabilized ZrO2 substrate, but with increasing the oxygen pressure few percentage of 30° twin growth was developed. On the other hand, the YMnO3 film on the Si substrate with an amorphous SiO2 layer exhibited (0001) or (112̄1) orientation. The (0001) oriented hexagonal YMnO3 phase was a stable one under tensile stress by the (0001) Al2O3 substrate, while it competed with the (011)-oriented orthorhombic YMnO3 phase under the compressive stress by the (111) SrTiO3 substrate.

AB - We have studied the crystal growth behavior of multiferroic YMnO 3 films synthesized by pulsed laser deposition on several different substrates. The growth orientation and surface morphology of YMnO3 films were sensitively dependent on the substrates and deposition conditions. An excellent epitaxial hexagonal YMnO3 film was grown on the (111) Y-stabilized ZrO2 substrate, but with increasing the oxygen pressure few percentage of 30° twin growth was developed. On the other hand, the YMnO3 film on the Si substrate with an amorphous SiO2 layer exhibited (0001) or (112̄1) orientation. The (0001) oriented hexagonal YMnO3 phase was a stable one under tensile stress by the (0001) Al2O3 substrate, while it competed with the (011)-oriented orthorhombic YMnO3 phase under the compressive stress by the (111) SrTiO3 substrate.

KW - A1. X-ray diffraction

KW - A3. Laser epitaxy

KW - B1. Oxides

KW - B2. Dielectric materials

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U2 - 10.1016/j.jcrysgro.2004.04.028

DO - 10.1016/j.jcrysgro.2004.04.028

M3 - Article

AN - SCOPUS:2942522575

SN - 0022-0248

VL - 267

SP - 548

EP - 553

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Epitaxial and oriented YMnO₃ film growth by pulsed laser deposition

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Keywords

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