Erratum: GaAs quantum dots with a high density on a GaAs (111)A substrate (Appl. Phys. Lett. (2006) 88(24) (241911) (10.1063/1.2213012))

Jong su Kim, Nobuyuki Koguchi, Mun Seok Jeong, Clare C. Byeon, Do Kyeong ko, Jongmin Lee, Jin Soo Kim, In Soo Kim

Research output: Contribution to journalComment/debate

Abstract

In the original publication titled GaAs quantum dots with a high density on a GaAs (111)A substrate, by Kim et al. [Appl. Phys. Lett. 88, 241911 (2006)], we have recently found an error word in the 2nd paragraph (lines 17-21) of column 1 on page 241911-2. It should read as It implies the Ga sticking coefficient on the (111)A surface is much larger than that of the (001) surface at the given temperature regime resulting in the relatively short migration length of Ga on the (111)A surface.

Original languageEnglish
Pages (from-to)241911
Number of pages1
JournalApplied Physics Letters
Volume88
Issue number17
DOIs
StatePublished - 22 Oct 2007

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