Etch characteristics of HfO                         2                          films on Si substrates

S. Norasetthekul; P. Y. Park; K. H. Baik; K. P. Lee; J. H. Shin; B. S. Jeong; V. Shishodia; D. P. Norton; S. J. Pearton

doi:10.1016/S0169-4332(01)00792-9

Etch characteristics of HfO ₂ films on Si substrates

S. Norasetthekul, P. Y. Park, K. H. Baik, K. P. Lee, J. H. Shin, B. S. Jeong, V. Shishodia, D. P. Norton, S. J. Pearton

University of Florida

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

The etch rates and mechanisms for HfO ₂ thin films in Cl ₂ -, SF ₆ - or CH ₄ /H ₂ -based plasmas were measured as a function of source power, r.f. chuck power and discharge composition. Both Cl ₂ - and SF ₆ -based plasmas produced some degree of chemical enhancement in the etch mechanism. Selectivities between 0.2 and 5 were obtained for Si over HfO ₂ in these two plasma chemistries. High fidelity pattern transfer was achieved for photoresist-masked HfO ₂ /Si structures etched with Cl ₂ /Ar over a broad range of pressures or with SF ₆ /Ar at low pressures. The surface morphologies of both HfO ₂ and Si were smooth over a wide range of etching conditions.

Original language	English
Pages (from-to)	75-81
Number of pages	7
Journal	Applied Surface Science
Volume	187
Issue number	1-2
DOIs	https://doi.org/10.1016/S0169-4332(01)00792-9
State	Published - 14 Feb 2002

Keywords

Etch rates
HfO films
Plasma
Si substrates

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10.1016/S0169-4332(01)00792-9

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Norasetthekul, S., Park, P. Y., Baik, K. H., Lee, K. P., Shin, J. H., Jeong, B. S., Shishodia, V., Norton, D. P., & Pearton, S. J. (2002). Etch characteristics of HfO ₂ films on Si substrates Applied Surface Science, 187(1-2), 75-81. https://doi.org/10.1016/S0169-4332(01)00792-9

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title = " Etch characteristics of HfO 2 films on Si substrates ",

abstract = " The etch rates and mechanisms for HfO 2 thin films in Cl 2 -, SF 6 - or CH 4 /H 2 -based plasmas were measured as a function of source power, r.f. chuck power and discharge composition. Both Cl 2 - and SF 6 -based plasmas produced some degree of chemical enhancement in the etch mechanism. Selectivities between 0.2 and 5 were obtained for Si over HfO 2 in these two plasma chemistries. High fidelity pattern transfer was achieved for photoresist-masked HfO 2 /Si structures etched with Cl 2 /Ar over a broad range of pressures or with SF 6 /Ar at low pressures. The surface morphologies of both HfO 2 and Si were smooth over a wide range of etching conditions.",

keywords = "Etch rates, HfO films, Plasma, Si substrates",

author = "S. Norasetthekul and Park, {P. Y.} and Baik, {K. H.} and Lee, {K. P.} and Shin, {J. H.} and Jeong, {B. S.} and V. Shishodia and Norton, {D. P.} and Pearton, {S. J.}",

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doi = "10.1016/S0169-4332(01)00792-9",

language = "English",

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T1 - Etch characteristics of HfO 2 films on Si substrates

AU - Norasetthekul, S.

AU - Park, P. Y.

AU - Baik, K. H.

AU - Lee, K. P.

AU - Shin, J. H.

AU - Jeong, B. S.

AU - Shishodia, V.

AU - Norton, D. P.

AU - Pearton, S. J.

PY - 2002/2/14

Y1 - 2002/2/14

N2 - The etch rates and mechanisms for HfO 2 thin films in Cl 2 -, SF 6 - or CH 4 /H 2 -based plasmas were measured as a function of source power, r.f. chuck power and discharge composition. Both Cl 2 - and SF 6 -based plasmas produced some degree of chemical enhancement in the etch mechanism. Selectivities between 0.2 and 5 were obtained for Si over HfO 2 in these two plasma chemistries. High fidelity pattern transfer was achieved for photoresist-masked HfO 2 /Si structures etched with Cl 2 /Ar over a broad range of pressures or with SF 6 /Ar at low pressures. The surface morphologies of both HfO 2 and Si were smooth over a wide range of etching conditions.

AB - The etch rates and mechanisms for HfO 2 thin films in Cl 2 -, SF 6 - or CH 4 /H 2 -based plasmas were measured as a function of source power, r.f. chuck power and discharge composition. Both Cl 2 - and SF 6 -based plasmas produced some degree of chemical enhancement in the etch mechanism. Selectivities between 0.2 and 5 were obtained for Si over HfO 2 in these two plasma chemistries. High fidelity pattern transfer was achieved for photoresist-masked HfO 2 /Si structures etched with Cl 2 /Ar over a broad range of pressures or with SF 6 /Ar at low pressures. The surface morphologies of both HfO 2 and Si were smooth over a wide range of etching conditions.

KW - Etch rates

KW - HfO films

KW - Plasma

KW - Si substrates

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U2 - 10.1016/S0169-4332(01)00792-9

DO - 10.1016/S0169-4332(01)00792-9

M3 - Article

AN - SCOPUS:0037075242

SN - 0169-4332

VL - 187

SP - 75

EP - 81

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-2

ER -

Etch characteristics of HfO ₂ films on Si substrates

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Keywords

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