Etch characteristics of HfO                         2                          films on Si substrates

S. Norasetthekul; P. Y. Park; K. H. Baik; K. P. Lee; J. H. Shin; B. S. Jeong; V. Shishodia; D. P. Norton; S. J. Pearton

doi:10.1016/S0169-4332(01)00792-9

Etch characteristics of HfO ₂ films on Si substrates

S. Norasetthekul
, P. Y. Park
, K. H. Baik
, K. P. Lee
, J. H. Shin
, B. S. Jeong
, V. Shishodia
, D. P. Norton
, S. J. Pearton

University of Florida

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

The etch rates and mechanisms for HfO ₂ thin films in Cl ₂ -, SF ₆ - or CH ₄ /H ₂ -based plasmas were measured as a function of source power, r.f. chuck power and discharge composition. Both Cl ₂ - and SF ₆ -based plasmas produced some degree of chemical enhancement in the etch mechanism. Selectivities between 0.2 and 5 were obtained for Si over HfO ₂ in these two plasma chemistries. High fidelity pattern transfer was achieved for photoresist-masked HfO ₂ /Si structures etched with Cl ₂ /Ar over a broad range of pressures or with SF ₆ /Ar at low pressures. The surface morphologies of both HfO ₂ and Si were smooth over a wide range of etching conditions.

Original language	English
Pages (from-to)	75-81
Number of pages	7
Journal	Applied Surface Science
Volume	187
Issue number	1-2
DOIs	https://doi.org/10.1016/S0169-4332(01)00792-9
State	Published - 14 Feb 2002

Keywords

Etch rates
HfO films
Plasma
Si substrates

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10.1016/S0169-4332(01)00792-9

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Norasetthekul, S., Park, P. Y., Baik, K. H., Lee, K. P., Shin, J. H., Jeong, B. S., Shishodia, V., Norton, D. P., & Pearton, S. J. (2002). Etch characteristics of HfO ₂ films on Si substrates Applied Surface Science, 187(1-2), 75-81. https://doi.org/10.1016/S0169-4332(01)00792-9

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title = " Etch characteristics of HfO 2 films on Si substrates ",

abstract = " The etch rates and mechanisms for HfO 2 thin films in Cl 2 -, SF 6 - or CH 4 /H 2 -based plasmas were measured as a function of source power, r.f. chuck power and discharge composition. Both Cl 2 - and SF 6 -based plasmas produced some degree of chemical enhancement in the etch mechanism. Selectivities between 0.2 and 5 were obtained for Si over HfO 2 in these two plasma chemistries. High fidelity pattern transfer was achieved for photoresist-masked HfO 2 /Si structures etched with Cl 2 /Ar over a broad range of pressures or with SF 6 /Ar at low pressures. The surface morphologies of both HfO 2 and Si were smooth over a wide range of etching conditions.",

keywords = "Etch rates, HfO films, Plasma, Si substrates",

author = "S. Norasetthekul and Park, \{P. Y.\} and Baik, \{K. H.\} and Lee, \{K. P.\} and Shin, \{J. H.\} and Jeong, \{B. S.\} and V. Shishodia and Norton, \{D. P.\} and Pearton, \{S. J.\}",

year = "2002",

month = feb,

day = "14",

doi = "10.1016/S0169-4332(01)00792-9",

language = "English",

volume = "187",

pages = "75--81",

journal = "Applied Surface Science",

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TY - JOUR

T1 - Etch characteristics of HfO 2 films on Si substrates

AU - Norasetthekul, S.

AU - Park, P. Y.

AU - Baik, K. H.

AU - Lee, K. P.

AU - Shin, J. H.

AU - Jeong, B. S.

AU - Shishodia, V.

AU - Norton, D. P.

AU - Pearton, S. J.

PY - 2002/2/14

Y1 - 2002/2/14

N2 - The etch rates and mechanisms for HfO 2 thin films in Cl 2 -, SF 6 - or CH 4 /H 2 -based plasmas were measured as a function of source power, r.f. chuck power and discharge composition. Both Cl 2 - and SF 6 -based plasmas produced some degree of chemical enhancement in the etch mechanism. Selectivities between 0.2 and 5 were obtained for Si over HfO 2 in these two plasma chemistries. High fidelity pattern transfer was achieved for photoresist-masked HfO 2 /Si structures etched with Cl 2 /Ar over a broad range of pressures or with SF 6 /Ar at low pressures. The surface morphologies of both HfO 2 and Si were smooth over a wide range of etching conditions.

AB - The etch rates and mechanisms for HfO 2 thin films in Cl 2 -, SF 6 - or CH 4 /H 2 -based plasmas were measured as a function of source power, r.f. chuck power and discharge composition. Both Cl 2 - and SF 6 -based plasmas produced some degree of chemical enhancement in the etch mechanism. Selectivities between 0.2 and 5 were obtained for Si over HfO 2 in these two plasma chemistries. High fidelity pattern transfer was achieved for photoresist-masked HfO 2 /Si structures etched with Cl 2 /Ar over a broad range of pressures or with SF 6 /Ar at low pressures. The surface morphologies of both HfO 2 and Si were smooth over a wide range of etching conditions.

KW - Etch rates

KW - HfO films

KW - Plasma

KW - Si substrates

UR - https://www.scopus.com/pages/publications/0037075242

U2 - 10.1016/S0169-4332(01)00792-9

DO - 10.1016/S0169-4332(01)00792-9

M3 - Article

AN - SCOPUS:0037075242

SN - 0169-4332

VL - 187

SP - 75

EP - 81

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-2

ER -

Etch characteristics of HfO ₂ films on Si substrates

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Keywords

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