Abstract
In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at VDS = 1 V, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain (Av), unit-gain frequency (funity), and cut-off frequency (fT). The Ge/GaAs HGD pnpn TFET demonstrated Av = 19.4 dB, funity = 10 THz, fT = 0.487 THz and fmax = 18THz.
Original language | English |
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Pages (from-to) | 2070-2078 |
Number of pages | 9 |
Journal | Journal of Electrical Engineering and Technology |
Volume | 9 |
Issue number | 6 |
DOIs | |
State | Published - 1 Nov 2014 |
Keywords
- Frequency response
- Gate-all-around
- Hetero-gate-dielectric
- Heterojunction
- Mixed-mode simulation
- TCAD
- Tunneling field-effect transistor