Excellent threshold switching device (Ioff ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (Vdd = 0.25 V) FET applications

Seokjae Lim; Jongmyung Yoo; Jeonghwan Song; Jiyong Woo; Jaehyuk Park; Hyunsang Hwang

doi:10.1109/IEDM.2016.7838543

Excellent threshold switching device (I_off ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V_dd = 0.25 V) FET applications

Seokjae Lim, Jongmyung Yoo, Jeonghwan Song, Jiyong Woo, Jaehyuk Park, Hyunsang Hwang

School of Electronics Engineering

Pohang University of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

To realize a steep-slope-FET with low leakage current and low operating bias, we engineered two types of atom-switch devices and integrated them with a silicon MOSFET. The integrated atom-switch-FET exhibits extremely low leakage current (10^-7 μA/μm), high I_on/I_off ratio (> 10⁷), low operating bias (< 1 V) and sub-5 mV/dec subthreshold swing with abrupt transition range of 10⁴. Furthermore, through the comprehensive understanding on the steep-slope-transition phenomenon, control parameters of atom-switch devices such as R_off and Vth, as for optimal performances of atom-switch-FET were investigated at various operating bias conditions.

Original language	English
Title of host publication	2016 IEEE International Electron Devices Meeting, IEDM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	34.7.1-37.7.4
ISBN (Electronic)	9781509039012
DOIs	https://doi.org/10.1109/IEDM.2016.7838543
State	Published - 31 Jan 2017
Event	62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States Duration: 3 Dec 2016 → 7 Dec 2016

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/Territory	United States
City	San Francisco
Period	3/12/16 → 7/12/16

Access to Document

10.1109/IEDM.2016.7838543

Cite this

Lim, S., Yoo, J., Song, J., Woo, J., Park, J., & Hwang, H. (2017). Excellent threshold switching device (I_off ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V_dd = 0.25 V) FET applications. In 2016 IEEE International Electron Devices Meeting, IEDM 2016 (pp. 34.7.1-37.7.4). Article 7838543 (Technical Digest - International Electron Devices Meeting, IEDM). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2016.7838543

Lim, Seokjae ; Yoo, Jongmyung ; Song, Jeonghwan et al. / Excellent threshold switching device (I_off ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V_dd = 0.25 V) FET applications. 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 34.7.1-37.7.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Excellent threshold switching device (Ioff ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (Vdd = 0.25 V) FET applications",

abstract = "To realize a steep-slope-FET with low leakage current and low operating bias, we engineered two types of atom-switch devices and integrated them with a silicon MOSFET. The integrated atom-switch-FET exhibits extremely low leakage current (10-7 μA/μm), high Ion/Ioff ratio (> 107), low operating bias (< 1 V) and sub-5 mV/dec subthreshold swing with abrupt transition range of 104. Furthermore, through the comprehensive understanding on the steep-slope-transition phenomenon, control parameters of atom-switch devices such as Roff and Vth, as for optimal performances of atom-switch-FET were investigated at various operating bias conditions.",

author = "Seokjae Lim and Jongmyung Yoo and Jeonghwan Song and Jiyong Woo and Jaehyuk Park and Hyunsang Hwang",

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Lim, S, Yoo, J, Song, J, Woo, J, Park, J & Hwang, H 2017, Excellent threshold switching device (I_off ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V_dd = 0.25 V) FET applications. in 2016 IEEE International Electron Devices Meeting, IEDM 2016., 7838543, Technical Digest - International Electron Devices Meeting, IEDM, Institute of Electrical and Electronics Engineers Inc., pp. 34.7.1-37.7.4, 62nd IEEE International Electron Devices Meeting, IEDM 2016, San Francisco, United States, 3/12/16. https://doi.org/10.1109/IEDM.2016.7838543

Excellent threshold switching device (I_off ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V_dd = 0.25 V) FET applications. / Lim, Seokjae; Yoo, Jongmyung; Song, Jeonghwan et al.
2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 34.7.1-37.7.4 7838543 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - To realize a steep-slope-FET with low leakage current and low operating bias, we engineered two types of atom-switch devices and integrated them with a silicon MOSFET. The integrated atom-switch-FET exhibits extremely low leakage current (10-7 μA/μm), high Ion/Ioff ratio (> 107), low operating bias (< 1 V) and sub-5 mV/dec subthreshold swing with abrupt transition range of 104. Furthermore, through the comprehensive understanding on the steep-slope-transition phenomenon, control parameters of atom-switch devices such as Roff and Vth, as for optimal performances of atom-switch-FET were investigated at various operating bias conditions.

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Lim S, Yoo J, Song J, Woo J, Park J, Hwang H. Excellent threshold switching device (I_off ∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (V_dd = 0.25 V) FET applications. In 2016 IEEE International Electron Devices Meeting, IEDM 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 34.7.1-37.7.4. 7838543. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM.2016.7838543