Abstract
The effects of Ga3+ and Li+ co-doping on the solubility limits and densification behavior of ZnO were examined. When Ga and Li were co-doped at a 1:1 ratio, the overall solubility of Ga and Li increased to approximately 40 at% (20 at% of Ga+20 at% of Li). The lattice parameter decreased with increasing Ga and Li content. Pure ZnO showed a single densification curve, of which densification began at 600 °C. On the other hand, when Ga and Li were co-doped in ZnO, some retardation of densification was observed and densification began at approximately 800~900 °C. Hall-effect measurements of the co-doped ZnO specimens showed n-type semiconducting behavior as well as a decrease in the electrical conductivity with increasing Ga and Li content. The changes in the lattice parameter and microstructure of the ZnO were also examined as a function of the Ga and Li content.
| Original language | English |
|---|---|
| Pages (from-to) | 575-579 |
| Number of pages | 5 |
| Journal | Journal of Nanoelectronics and Optoelectronics |
| Volume | 7 |
| Issue number | 5 |
| DOIs | |
| State | Published - Oct 2012 |
Keywords
- Co-Doping
- Densification
- Solubility Limit
- ZnO
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