Experimental and Simulation Study on the Electrical Characteristics of Proton-irradiated AlGaN/GaN HEMT

So Ra Jeon; Sang Ho Lee; Jin Park; Min Seok Kim; Seung Ji Bae; Jeong Woo Hong; Won Suk Koh; Gang San Yun; In Man Kang; Young Jun Yoon

doi:10.5573/JSTS.2025.25.1.21

Experimental and Simulation Study on the Electrical Characteristics of Proton-irradiated AlGaN/GaN HEMT

So Ra Jeon, Sang Ho Lee, Jin Park, Min Seok Kim, Seung Ji Bae, Jeong Woo Hong, Won Suk Koh, Gang San Yun, In Man Kang, Young Jun Yoon

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, we conducted an irradiation experiment using protons with 5 MeV energy and a fluence of 5 × 10¹³ cm⁻² to analyze the effects on AlGaN/GaN high electron-mobility transistors (HEMTs). After proton irradiation, the on-resistance (R_on) value increased by 57%, the on-state current (I_on) decreased by 26.78%, and the off-state current (I_off) increased by 89.63%. Despite these changes in I_on and I_off, there was no significant change in the threshold voltage (V_t). This indicates that the two-dimensional electronic gas (2DEG) density, which determines V_t did not sustain significant damage. The degradation in device characteristics was attributed to other factors, which were analyzed through a resistance-based equation. Additionally, we performed simulation fitting to complete a quantitative cause analysis. We believe that our findings will contribute to preliminary verification research for high-reliability experiments, such as space and aviation semiconductors.

Original language	English
Pages (from-to)	21-29
Number of pages	9
Journal	Journal of Semiconductor Technology and Science
Volume	25
Issue number	1
DOIs	https://doi.org/10.5573/JSTS.2025.25.1.21
State	Published - 2025

Keywords

AlGaN/GaN HEMT
proton irradiation effects
reliability analysis
simulation modeling

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10.5573/JSTS.2025.25.1.21

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title = "Experimental and Simulation Study on the Electrical Characteristics of Proton-irradiated AlGaN/GaN HEMT",

abstract = "In this study, we conducted an irradiation experiment using protons with 5 MeV energy and a fluence of 5 × 1013 cm−2 to analyze the effects on AlGaN/GaN high electron-mobility transistors (HEMTs). After proton irradiation, the on-resistance (Ron) value increased by 57\%, the on-state current (Ion) decreased by 26.78\%, and the off-state current (Ioff) increased by 89.63\%. Despite these changes in Ion and Ioff, there was no significant change in the threshold voltage (Vt). This indicates that the two-dimensional electronic gas (2DEG) density, which determines Vt did not sustain significant damage. The degradation in device characteristics was attributed to other factors, which were analyzed through a resistance-based equation. Additionally, we performed simulation fitting to complete a quantitative cause analysis. We believe that our findings will contribute to preliminary verification research for high-reliability experiments, such as space and aviation semiconductors.",

keywords = "AlGaN/GaN HEMT, proton irradiation effects, reliability analysis, simulation modeling",

author = "Jeon, \{So Ra\} and Lee, \{Sang Ho\} and Jin Park and Kim, \{Min Seok\} and Bae, \{Seung Ji\} and Hong, \{Jeong Woo\} and Koh, \{Won Suk\} and Yun, \{Gang San\} and Kang, \{In Man\} and Yoon, \{Young Jun\}",

year = "2025",

doi = "10.5573/JSTS.2025.25.1.21",

language = "English",

volume = "25",

pages = "21--29",

journal = "Journal of Semiconductor Technology and Science",

issn = "1598-1657",

publisher = "Institute of Electronics Engineers of Korea",

number = "1",

}

TY - JOUR

T1 - Experimental and Simulation Study on the Electrical Characteristics of Proton-irradiated AlGaN/GaN HEMT

AU - Jeon, So Ra

AU - Lee, Sang Ho

AU - Park, Jin

AU - Kim, Min Seok

AU - Bae, Seung Ji

AU - Hong, Jeong Woo

AU - Koh, Won Suk

AU - Yun, Gang San

AU - Kang, In Man

AU - Yoon, Young Jun

PY - 2025

Y1 - 2025

N2 - In this study, we conducted an irradiation experiment using protons with 5 MeV energy and a fluence of 5 × 1013 cm−2 to analyze the effects on AlGaN/GaN high electron-mobility transistors (HEMTs). After proton irradiation, the on-resistance (Ron) value increased by 57%, the on-state current (Ion) decreased by 26.78%, and the off-state current (Ioff) increased by 89.63%. Despite these changes in Ion and Ioff, there was no significant change in the threshold voltage (Vt). This indicates that the two-dimensional electronic gas (2DEG) density, which determines Vt did not sustain significant damage. The degradation in device characteristics was attributed to other factors, which were analyzed through a resistance-based equation. Additionally, we performed simulation fitting to complete a quantitative cause analysis. We believe that our findings will contribute to preliminary verification research for high-reliability experiments, such as space and aviation semiconductors.

AB - In this study, we conducted an irradiation experiment using protons with 5 MeV energy and a fluence of 5 × 1013 cm−2 to analyze the effects on AlGaN/GaN high electron-mobility transistors (HEMTs). After proton irradiation, the on-resistance (Ron) value increased by 57%, the on-state current (Ion) decreased by 26.78%, and the off-state current (Ioff) increased by 89.63%. Despite these changes in Ion and Ioff, there was no significant change in the threshold voltage (Vt). This indicates that the two-dimensional electronic gas (2DEG) density, which determines Vt did not sustain significant damage. The degradation in device characteristics was attributed to other factors, which were analyzed through a resistance-based equation. Additionally, we performed simulation fitting to complete a quantitative cause analysis. We believe that our findings will contribute to preliminary verification research for high-reliability experiments, such as space and aviation semiconductors.

KW - AlGaN/GaN HEMT

KW - proton irradiation effects

KW - reliability analysis

KW - simulation modeling

UR - https://www.scopus.com/pages/publications/105000929975

U2 - 10.5573/JSTS.2025.25.1.21

DO - 10.5573/JSTS.2025.25.1.21

M3 - Article

AN - SCOPUS:105000929975

SN - 1598-1657

VL - 25

SP - 21

EP - 29

JO - Journal of Semiconductor Technology and Science

JF - Journal of Semiconductor Technology and Science

IS - 1

ER -

Experimental and Simulation Study on the Electrical Characteristics of Proton-irradiated AlGaN/GaN HEMT

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