Abstract
The effect of an ambient temperature ranging from -5°C to +65°C on the discharge characteristics was examined. The change in the firing voltage according to the ambient temperature was much higher under MgO cathode conditions with a high secondary electron emission coefficient than under phosphor cathode conditions with a low secondary electron emission coefficient. Through the weak reset discharge, the wall voltages were increased with an increase in the ambient temperature, as the wall charges were less erased at a higher ambient temperature during the ramp-down period. An increase in the ambient temperature was also found to have a more significant influence on the statistical delay time than on the formative delay time. Since the statistical delay time is strongly related to the priming condition, a higher ambient temperature may contribute to a better priming condition for reducing the statistical delay time during the address period.
| Original language | English |
|---|---|
| Pages (from-to) | 334-338 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Plasma Science |
| Volume | 37 |
| Issue number | 2 |
| DOIs | |
| State | Published - 2009 |
Keywords
- Address discharge
- Ambient temperature
- Discharge characteristics
- Vt closed-curve
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