@inproceedings{1152eb1b1728485ba960547127bf1282,
title = "Experimental study on quantum mechanical effect for insensitivity of threshold voltage against temperature variation in strained SOI MOSFETs",
abstract = "The temperature dependence of threshold voltage (VT) in a thin-body MOSFET, which was built on a strained silicon-on-insulator (sSOI) wafer, is examined in a temperature range of 173 K to 373 K. The insensitive temperature dependency of threshold voltage (VT) is attributed to the strain effect arisen from the sSOI, which makes the energy quantization stronger due to the lowered conductivity mass. Additionally, enhanced mobility of 770 cm2/V·sec at room temperature is achieved due to the strain effect.",
keywords = "quantum mechanical effect, silicon on insulator (SOI), strained SOI (sSOI), temperature dependency, threshold voltage, ultra-thin body (UTB)",
author = "Jeon, {Chang Hoon} and Lee, {Byung Hyun} and Jang, {Byung Chul} and Choi, {Sung Yool} and Choi, {Yang Kyu}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015 ; Conference date: 05-10-2015 Through 08-10-2015",
year = "2015",
month = nov,
day = "20",
doi = "10.1109/S3S.2015.7333545",
language = "English",
series = "2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015",
address = "United States",
}