Extra-relaxation effects in ultra-thin Al 2O 3 films on metal substrates

Myoung Bok Lee, Jung Hee Lee, Young Hyun Lee, Jong Hyun Lee, Sung Ho Hahm

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The oxidation of NiAl(110) was investigated in the temperature range between 300 K and 1300 K by using Auger electron spectroscopy, X-ray photoelectron spectroscopy, and low energy electron diffraction. The adsorption of N 2O on clean NiAl(110) at 300 K leads only to selective oxidation of the surface aluminium without any apparent surface reconstructions. Stepwise annealing of the heavily oxygen-doped samples from 600 K to 1300 K in ultra-high vacuum results firstly in the onset of randomly oriented oxide surface then finally fairly well-ordered Al 2O 3 films. The much wider energy separation between the core (or Auger transition) levels of metallic Al 0 and oxidic Al 3+ states for thicker oxide films is believed to be due to a lower degree of extra-relaxation by metallic electrons and, therefore, would imply better quality for oxide films with similar thicknesses.

Original languageEnglish
Pages (from-to)482-491
Number of pages10
JournalJournal of the Korean Physical Society
Volume35
Issue number6
StatePublished - 1999

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