Abstract
The oxidation of NiAl(110) was investigated in the temperature range between 300 K and 1300 K by using Auger electron spectroscopy, X-ray photoelectron spectroscopy, and low energy electron diffraction. The adsorption of N 2O on clean NiAl(110) at 300 K leads only to selective oxidation of the surface aluminium without any apparent surface reconstructions. Stepwise annealing of the heavily oxygen-doped samples from 600 K to 1300 K in ultra-high vacuum results firstly in the onset of randomly oriented oxide surface then finally fairly well-ordered Al 2O 3 films. The much wider energy separation between the core (or Auger transition) levels of metallic Al 0 and oxidic Al 3+ states for thicker oxide films is believed to be due to a lower degree of extra-relaxation by metallic electrons and, therefore, would imply better quality for oxide films with similar thicknesses.
| Original language | English |
|---|---|
| Pages (from-to) | 482-491 |
| Number of pages | 10 |
| Journal | Journal of the Korean Physical Society |
| Volume | 35 |
| Issue number | 6 |
| State | Published - 1999 |
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