Extraction and modeling of physics-based gate resistance components in RF MOSFETs

Myounggon Kang; In Man Kang; Hyungcheol Shin

doi:10.1109/SMIC.2005.1587949

Extraction and modeling of physics-based gate resistance components in RF MOSFETs

Myounggon Kang, In Man Kang, Hyungcheol Shin

School of Electronics Engineering

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

A simple and accurate method is presented for extraction of the effective gate resistance of RF MOSFETs. Both the gate electrode resistance and the channel resistance were extracted separately. The proposed physics-based gate resistance model can accurately predict not only the bias dependency but also the dependence on the number of fingers, channel lengths, and widths

Original language	English
Title of host publication	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Pages	218-221
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2005.1587949
State	Published - 2006
Event	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - San Diego, CA, United States Duration: 18 Jan 2006 → 20 Jan 2006

Publication series

Name	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers
Volume	2006

Conference

Conference	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Country/Territory	United States
City	San Diego, CA
Period	18/01/06 → 20/01/06

Keywords

Channel resistance
Electrode resistance
Gate resistance
Modeling
Parameter extraction
RF MOSFETs

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10.1109/SMIC.2005.1587949

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Kang, M., Kang, I. M., & Shin, H. (2006). Extraction and modeling of physics-based gate resistance components in RF MOSFETs. In 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers (pp. 218-221). Article 1587949 (2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers; Vol. 2006). https://doi.org/10.1109/SMIC.2005.1587949

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title = "Extraction and modeling of physics-based gate resistance components in RF MOSFETs",

abstract = "A simple and accurate method is presented for extraction of the effective gate resistance of RF MOSFETs. Both the gate electrode resistance and the channel resistance were extracted separately. The proposed physics-based gate resistance model can accurately predict not only the bias dependency but also the dependence on the number of fingers, channel lengths, and widths",

keywords = "Channel resistance, Electrode resistance, Gate resistance, Modeling, Parameter extraction, RF MOSFETs",

author = "Myounggon Kang and Kang, {In Man} and Hyungcheol Shin",

year = "2006",

doi = "10.1109/SMIC.2005.1587949",

language = "English",

isbn = "0780394720",

series = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",

pages = "218--221",

booktitle = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers",

note = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems ; Conference date: 18-01-2006 Through 20-01-2006",

}

Kang, M, Kang, IM & Shin, H 2006, Extraction and modeling of physics-based gate resistance components in RF MOSFETs. in 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers., 1587949, 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers, vol. 2006, pp. 218-221, 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Diego, CA, United States, 18/01/06. https://doi.org/10.1109/SMIC.2005.1587949

Extraction and modeling of physics-based gate resistance components in RF MOSFETs. / Kang, Myounggon; Kang, In Man; Shin, Hyungcheol.
2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers. 2006. p. 218-221 1587949 (2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Extraction and modeling of physics-based gate resistance components in RF MOSFETs

AU - Kang, Myounggon

AU - Kang, In Man

AU - Shin, Hyungcheol

PY - 2006

Y1 - 2006

N2 - A simple and accurate method is presented for extraction of the effective gate resistance of RF MOSFETs. Both the gate electrode resistance and the channel resistance were extracted separately. The proposed physics-based gate resistance model can accurately predict not only the bias dependency but also the dependence on the number of fingers, channel lengths, and widths

AB - A simple and accurate method is presented for extraction of the effective gate resistance of RF MOSFETs. Both the gate electrode resistance and the channel resistance were extracted separately. The proposed physics-based gate resistance model can accurately predict not only the bias dependency but also the dependence on the number of fingers, channel lengths, and widths

KW - Channel resistance

KW - Electrode resistance

KW - Gate resistance

KW - Modeling

KW - Parameter extraction

KW - RF MOSFETs

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M3 - Conference contribution

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BT - 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of Papers

T2 - 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

Y2 - 18 January 2006 through 20 January 2006

ER -

Extraction and modeling of physics-based gate resistance components in RF MOSFETs

Abstract

Publication series

Conference

Keywords

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