Extraction method for cross-type substrate resistances of RF MOSFETs based on PSP model

I. M. Kang; H. Shin

doi:10.1049/el.2010.0763

Extraction method for cross-type substrate resistances of RF MOSFETs based on PSP model

I. M. Kang, H. Shin

School of Electronics Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A new extraction method of substrate resistances for radio-frequency MOSFETs is presented. Analytical equations for parameter extractions are derived by Y-parameter analysis for the cross-type substrate network. The cross-type substrate network is the substrate architecture in the PSP model. Accuracy of the extraction method is verified by MOSFETs fabricated by 130nm RF CMOS technology.

Original language	English
Pages (from-to)	784-786
Number of pages	3
Journal	Electronics Letters
Volume	46
Issue number	11
DOIs	https://doi.org/10.1049/el.2010.0763
State	Published - 27 May 2010

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title = "Extraction method for cross-type substrate resistances of RF MOSFETs based on PSP model",

abstract = "A new extraction method of substrate resistances for radio-frequency MOSFETs is presented. Analytical equations for parameter extractions are derived by Y-parameter analysis for the cross-type substrate network. The cross-type substrate network is the substrate architecture in the PSP model. Accuracy of the extraction method is verified by MOSFETs fabricated by 130nm RF CMOS technology.",

author = "Kang, {I. M.} and H. Shin",

year = "2010",

month = may,

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doi = "10.1049/el.2010.0763",

language = "English",

volume = "46",

pages = "784--786",

journal = "Electronics Letters",

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publisher = "John Wiley & Sons Inc.",

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AU - Kang, I. M.

AU - Shin, H.

PY - 2010/5/27

Y1 - 2010/5/27

N2 - A new extraction method of substrate resistances for radio-frequency MOSFETs is presented. Analytical equations for parameter extractions are derived by Y-parameter analysis for the cross-type substrate network. The cross-type substrate network is the substrate architecture in the PSP model. Accuracy of the extraction method is verified by MOSFETs fabricated by 130nm RF CMOS technology.

AB - A new extraction method of substrate resistances for radio-frequency MOSFETs is presented. Analytical equations for parameter extractions are derived by Y-parameter analysis for the cross-type substrate network. The cross-type substrate network is the substrate architecture in the PSP model. Accuracy of the extraction method is verified by MOSFETs fabricated by 130nm RF CMOS technology.

UR - http://www.scopus.com/inward/record.url?scp=77953018291&partnerID=8YFLogxK

U2 - 10.1049/el.2010.0763

DO - 10.1049/el.2010.0763

M3 - Article

AN - SCOPUS:77953018291

SN - 0013-5194

VL - 46

SP - 784

EP - 786

JO - Electronics Letters

JF - Electronics Letters

IS - 11

ER -

Extraction method for cross-type substrate resistances of RF MOSFETs based on PSP model

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