Extraction of π-type substrate resistance based on three-port measurement and the model verification up to 110 GHz

In Man Kang; Jong Duk Lee; Hyungcheol Shin

doi:10.1109/LED.2007.895395

Extraction of π-type substrate resistance based on three-port measurement and the model verification up to 110 GHz

In Man Kang, Jong Duk Lee, Hyungcheol Shin

School of Electronics Engineering

Seoul National University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

An analytical parameter-extraction method for Π-type substrate resistance model of RF MOSFETs based on three-port measurement is presented for the first time. The values of substrate resistance components are extracted directly from the three-port S-parameter measurement data, and the output admittance of the MOSFETs is well matched up to 110 GHz. Using a macromodel with extracted substrate components, it is verified thatΠ-type substrate resistance model is more accurate than other substrate resistance models.

Original language	English
Pages (from-to)	425-427
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	5
DOIs	https://doi.org/10.1109/LED.2007.895395
State	Published - May 2007

Keywords

Macromodel
RF MOSFETs
Substrate resistance
Three-port

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10.1109/LED.2007.895395

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abstract = "An analytical parameter-extraction method for Π-type substrate resistance model of RF MOSFETs based on three-port measurement is presented for the first time. The values of substrate resistance components are extracted directly from the three-port S-parameter measurement data, and the output admittance of the MOSFETs is well matched up to 110 GHz. Using a macromodel with extracted substrate components, it is verified thatΠ-type substrate resistance model is more accurate than other substrate resistance models.",

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N2 - An analytical parameter-extraction method for Π-type substrate resistance model of RF MOSFETs based on three-port measurement is presented for the first time. The values of substrate resistance components are extracted directly from the three-port S-parameter measurement data, and the output admittance of the MOSFETs is well matched up to 110 GHz. Using a macromodel with extracted substrate components, it is verified thatΠ-type substrate resistance model is more accurate than other substrate resistance models.

AB - An analytical parameter-extraction method for Π-type substrate resistance model of RF MOSFETs based on three-port measurement is presented for the first time. The values of substrate resistance components are extracted directly from the three-port S-parameter measurement data, and the output admittance of the MOSFETs is well matched up to 110 GHz. Using a macromodel with extracted substrate components, it is verified thatΠ-type substrate resistance model is more accurate than other substrate resistance models.

KW - Macromodel

KW - RF MOSFETs

KW - Substrate resistance

KW - Three-port

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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Extraction of π-type substrate resistance based on three-port measurement and the model verification up to 110 GHz

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Keywords

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