Extraction of effective carrier velocity in RF MOSFETs

Yeonam Yun; In Man Kang; Byung Gook Park; Jong Duk Lee; Hyungeheol Shin

doi:10.1109/SMIC.2007.322772

Extraction of effective carrier velocity in RF MOSFETs

Yeonam Yun, In Man Kang, Byung Gook Park, Jong Duk Lee, Hyungeheol Shin

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

A more accurate method based on the actual inversion charge measurement in this paper is proposed to extract the effective carrier velocity in RF MOSFETs. This method uses the gate-drain intrinsic capacitance and g_mb-g _m relation to get the actual inversion charge at various Vds, and above parameters are obtained from S-parameters. This method gives more accurate result over the whole range of V_ds, because it doesn't assume a linear approximation to obtain the inversion charge and it doesn't limit the range of applicable V_ds.

Original language	English
Title of host publication	2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Pages	72-75
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2007.322772
State	Published - 2007
Event	2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 - Long Beach, CA, United States Duration: 10 Jan 2007 → 12 Jan 2007

Publication series

Name	2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Conference

Conference	2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Country/Territory	United States
City	Long Beach, CA
Period	10/01/07 → 12/01/07

Keywords

Carrier velocity
MOSFET
S-parameters

Access to Document

10.1109/SMIC.2007.322772

Cite this

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title = "Extraction of effective carrier velocity in RF MOSFETs",

abstract = "A more accurate method based on the actual inversion charge measurement in this paper is proposed to extract the effective carrier velocity in RF MOSFETs. This method uses the gate-drain intrinsic capacitance and gmb-g m relation to get the actual inversion charge at various Vds, and above parameters are obtained from S-parameters. This method gives more accurate result over the whole range of Vds, because it doesn't assume a linear approximation to obtain the inversion charge and it doesn't limit the range of applicable Vds.",

keywords = "Carrier velocity, MOSFET, S-parameters",

author = "Yeonam Yun and Kang, {In Man} and Park, {Byung Gook} and Lee, {Jong Duk} and Hyungeheol Shin",

year = "2007",

doi = "10.1109/SMIC.2007.322772",

language = "English",

isbn = "0780397649",

series = "2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07",

pages = "72--75",

booktitle = "2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07",

note = "2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 ; Conference date: 10-01-2007 Through 12-01-2007",

}

Yun, Y, Kang, IM, Park, BG, Lee, JD & Shin, H 2007, Extraction of effective carrier velocity in RF MOSFETs. in 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07., 4117328, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07, pp. 72-75, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07, Long Beach, CA, United States, 10/01/07. https://doi.org/10.1109/SMIC.2007.322772

Extraction of effective carrier velocity in RF MOSFETs. / Yun, Yeonam; Kang, In Man; Park, Byung Gook et al.
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07. 2007. p. 72-75 4117328 (2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Extraction of effective carrier velocity in RF MOSFETs

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AU - Lee, Jong Duk

AU - Shin, Hyungeheol

PY - 2007

Y1 - 2007

N2 - A more accurate method based on the actual inversion charge measurement in this paper is proposed to extract the effective carrier velocity in RF MOSFETs. This method uses the gate-drain intrinsic capacitance and gmb-g m relation to get the actual inversion charge at various Vds, and above parameters are obtained from S-parameters. This method gives more accurate result over the whole range of Vds, because it doesn't assume a linear approximation to obtain the inversion charge and it doesn't limit the range of applicable Vds.

AB - A more accurate method based on the actual inversion charge measurement in this paper is proposed to extract the effective carrier velocity in RF MOSFETs. This method uses the gate-drain intrinsic capacitance and gmb-g m relation to get the actual inversion charge at various Vds, and above parameters are obtained from S-parameters. This method gives more accurate result over the whole range of Vds, because it doesn't assume a linear approximation to obtain the inversion charge and it doesn't limit the range of applicable Vds.

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KW - S-parameters

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DO - 10.1109/SMIC.2007.322772

M3 - Conference contribution

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BT - 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

T2 - 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Y2 - 10 January 2007 through 12 January 2007

ER -

Extraction of effective carrier velocity in RF MOSFETs

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Keywords

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