Extraction of effective mobility of In0.8Ga0.2As/In0.52Al0.48As quantum well high-electron-mobility transistors on InP substrate

Wan Soo Park, Jun Gyu Kim, Seung Won Yun, Hyeon Seok Jeong, Hyeon Bhin Jo, Tae Woo Kim, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Dae Hyun Kim

Research output: Contribution to journal › Article › peer-review

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