@inproceedings{df58bd148507406c847917d7e33442e1,
title = "Extraction of virtual-source injection velocity in sub-100 nm III-V HFETs",
abstract = "We have experimentally extracted the virtual-source electron injection velocity, vx0, of various III-V HFETs at room temperature. This is the carrier velocity that matters for logic applications of these transistors. Sub-100 nm devices with μn > 10,000 cm2/V-s exhibit vx0 in excess of 3 × 107 cm/s even at VDD = 0.5 V. This is over 2 times that of state-of-the-art Si devices at VDD > 1. We have verified our extraction methodology for vx0 by building a simple charge-based semiempirical model for the I-V characteristics of III-V HFETs. This model yields an excellent description of the entire I-V characteristics of the devices from subthreshold to inversion and from linear to saturation regimes with fitted electron velocities that are very close to those independently obtained through our proposed extraction methodology.",
author = "Kim, {D. H.} and {Del Alamo}, {J. A.} and Antoniadis, {D. A.} and B. Brar",
year = "2009",
doi = "10.1109/IEDM.2009.5424268",
language = "English",
isbn = "9781424456406",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "35.4.1--35.4.4",
booktitle = "2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest",
note = "2009 International Electron Devices Meeting, IEDM 2009 ; Conference date: 07-12-2009 Through 09-12-2009",
}