Extremely bias stress stable enhancement mode sol–gel-processed SnO2 thin-film transistors with Y2O3 passivation layers

Changmin Lee, Won Yong Lee, Do Won Kim, Hyeon Joong Kim, Jin Hyuk Bae, In Man Kang, Doohyeok Lim, Kwangeun Kim, Jaewon Jang

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Fingerprint

Dive into the research topics of 'Extremely bias stress stable enhancement mode sol–gel-processed SnO2 thin-film transistors with Y2O3 passivation layers'. Together they form a unique fingerprint.

Material Science