f T = 688 GHz and f max = 800 GHz in L g = 40 nm In 0.7Ga 0.3As MHEMTs with g m-max > 2.7 mS/μm

Dae Hyun Kim; Berinder Brar; Jesús A. Del Alamo

doi:10.1109/IEDM.2011.6131548

f _T = 688 GHz and f _max = 800 GHz in L _g = 40 nm In _0.7Ga _0.3As MHEMTs with g _m-max > 2.7 mS/μm

Dae Hyun Kim, Berinder Brar, Jesús A. Del Alamo

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

47 Scopus citations

Abstract

We have demonstrated 40-nm In _0.7Ga _0.3As Metamorphic HEMTs (MHEMTs) with a record value in f _T. The devices feature a Pt gate sinking process to effectively thin down the In _0.52Al _0.48As barrier layer, together with dual Si d-doping in the barrier to lower the potential barrier in the S/D access region. The fabricated device with L _g = 40-nm exhibits V _T = 0.05 V, g _m,max = 2.7 mS/μm, f _T = 688 GHz and f _max = 800 GHz. In addition, we have developed an analytical model of f _T in a III-V HEMT based on a small-signal equivalent circuit, which provides an excellent agreement with measured f _T. This in turns guides a realistic way to further improve f _T beyond THz.

Original language	English
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	13.6.1-13.6.4
DOIs	https://doi.org/10.1109/IEDM.2011.6131548
State	Published - 2011
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: 5 Dec 2011 → 7 Dec 2011

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	5/12/11 → 7/12/11

Access to Document

10.1109/IEDM.2011.6131548

Cite this

@inproceedings{9f73a5825f2c4ae0ad8dc530ce854b5c,

title = "f T = 688 GHz and f max = 800 GHz in L g = 40 nm In 0.7Ga 0.3As MHEMTs with g m-max > 2.7 mS/μm",

abstract = "We have demonstrated 40-nm In 0.7Ga 0.3As Metamorphic HEMTs (MHEMTs) with a record value in f T. The devices feature a Pt gate sinking process to effectively thin down the In 0.52Al 0.48As barrier layer, together with dual Si d-doping in the barrier to lower the potential barrier in the S/D access region. The fabricated device with L g = 40-nm exhibits V T = 0.05 V, g m,max = 2.7 mS/μm, f T = 688 GHz and f max = 800 GHz. In addition, we have developed an analytical model of f T in a III-V HEMT based on a small-signal equivalent circuit, which provides an excellent agreement with measured f T. This in turns guides a realistic way to further improve f T beyond THz.",

author = "Kim, {Dae Hyun} and Berinder Brar and {Del Alamo}, {Jes{\'u}s A.}",

year = "2011",

doi = "10.1109/IEDM.2011.6131548",

language = "English",

isbn = "9781457705052",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "13.6.1--13.6.4",

booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",

}

Kim, DH, Brar, B & Del Alamo, JA 2011, f _T = 688 GHz and f _max = 800 GHz in L _g = 40 nm In _0.7Ga _0.3As MHEMTs with g _m-max > 2.7 mS/μm. in 2011 International Electron Devices Meeting, IEDM 2011., 6131548, Technical Digest - International Electron Devices Meeting, IEDM, pp. 13.6.1-13.6.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 5/12/11. https://doi.org/10.1109/IEDM.2011.6131548

f _T = 688 GHz and f _max = 800 GHz in L _g = 40 nm In _0.7Ga _0.3As MHEMTs with g _m-max > 2.7 mS/μm. / Kim, Dae Hyun; Brar, Berinder; Del Alamo, Jesús A.
2011 International Electron Devices Meeting, IEDM 2011. 2011. p. 13.6.1-13.6.4 6131548 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - f T = 688 GHz and f max = 800 GHz in L g = 40 nm In 0.7Ga 0.3As MHEMTs with g m-max > 2.7 mS/μm

AU - Kim, Dae Hyun

AU - Brar, Berinder

AU - Del Alamo, Jesús A.

PY - 2011

Y1 - 2011

N2 - We have demonstrated 40-nm In 0.7Ga 0.3As Metamorphic HEMTs (MHEMTs) with a record value in f T. The devices feature a Pt gate sinking process to effectively thin down the In 0.52Al 0.48As barrier layer, together with dual Si d-doping in the barrier to lower the potential barrier in the S/D access region. The fabricated device with L g = 40-nm exhibits V T = 0.05 V, g m,max = 2.7 mS/μm, f T = 688 GHz and f max = 800 GHz. In addition, we have developed an analytical model of f T in a III-V HEMT based on a small-signal equivalent circuit, which provides an excellent agreement with measured f T. This in turns guides a realistic way to further improve f T beyond THz.

AB - We have demonstrated 40-nm In 0.7Ga 0.3As Metamorphic HEMTs (MHEMTs) with a record value in f T. The devices feature a Pt gate sinking process to effectively thin down the In 0.52Al 0.48As barrier layer, together with dual Si d-doping in the barrier to lower the potential barrier in the S/D access region. The fabricated device with L g = 40-nm exhibits V T = 0.05 V, g m,max = 2.7 mS/μm, f T = 688 GHz and f max = 800 GHz. In addition, we have developed an analytical model of f T in a III-V HEMT based on a small-signal equivalent circuit, which provides an excellent agreement with measured f T. This in turns guides a realistic way to further improve f T beyond THz.

UR - http://www.scopus.com/inward/record.url?scp=84863032105&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2011.6131548

DO - 10.1109/IEDM.2011.6131548

M3 - Conference contribution

AN - SCOPUS:84863032105

SN - 9781457705052

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 13.6.1-13.6.4

BT - 2011 International Electron Devices Meeting, IEDM 2011

T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011

Y2 - 5 December 2011 through 7 December 2011

ER -