Fabrication and beta-ray source test of double-sided silicon strip sensor

Since a double-sided silicon strip sensor provides two-dimensional position information with high resolution, it has been developed for various uses as a medical imaging sensor, radiation detector, sensing detector in space science, and a silicon vertexing/tracking detector in experimental particle physics. We designed and fabricated a double-sided silicon position sensor in a 5 in. fabrication line. Silicon nitride with a silicon oxide layer was used to prevent damage during sensor fabrication. Since the temperature dependences of the silicon nitride and the silicon oxide are different, the thicknesses of the Si₃N₄ and SiO₂ layers were optimized using the ATHENA process simulation to avoid cracks. We present the measurement results of the electrical characteristics of the sensor such as leakage current and capacitance as a function of reverse bias voltage. We performed tests on the sensor using a ⁹⁰Sr radioactive source and measured the signal-to-noise ratio of the prototype sensor.