Fabrication and characteristics analysis of SAW filter using Al 0.36Ga0.64N thin film on sapphire substrate

Cheol Yeong Jang; Min Jung Park; Sun Yeol Ryu; Hyun Chul Choi; Jung Hee Lee; Yong Hyun Lee

doi:10.1002/pssc.200390035

Fabrication and characteristics analysis of SAW filter using Al _0.36Ga_0.64N thin film on sapphire substrate

Cheol Yeong Jang, Min Jung Park, Sun Yeol Ryu, Hyun Chul Choi, Jung Hee Lee, Yong Hyun Lee

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Conference article › peer-review

Abstract

The surface acoustic wave (SAW) characteristics of Al_xGa _1-xN thin films, such as velocity, electromechanical coupling coefficient κ², temperature coefficient of frequency (TCF), and propagation loss, were investigated. Al_xGa_1-xN thin film was deposited on sapphire substrate by metal organic chemical vapour deposition and the Al mole fraction of x = 0.36 was measured using Rutherford backscattering spectroscopy. SAW velocity of 5510 m/s and TCF of -51.20 ppm/°C were measured when the κh value was 0.078 and temperature ranged between -30 and 60 °C. κ² varied from 1.26% to 2.22%. The fabricated SAW filter exhibited good device performance with insertion loss of -33.853 dB and sidelobe attenuation of 20 dB when the wavelength was 60 mm (λ/4 = 15 μm) and the centre frequency was 90.34 MHz.

Original language	English
Pages (from-to)	248-252
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200390035
State	Published - 1 Dec 2002
Event	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany Duration: 22 Jul 2002 → 25 Jul 2002

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title = "Fabrication and characteristics analysis of SAW filter using Al 0.36Ga0.64N thin film on sapphire substrate",

abstract = "The surface acoustic wave (SAW) characteristics of AlxGa 1-xN thin films, such as velocity, electromechanical coupling coefficient κ2, temperature coefficient of frequency (TCF), and propagation loss, were investigated. AlxGa1-xN thin film was deposited on sapphire substrate by metal organic chemical vapour deposition and the Al mole fraction of x = 0.36 was measured using Rutherford backscattering spectroscopy. SAW velocity of 5510 m/s and TCF of -51.20 ppm/°C were measured when the κh value was 0.078 and temperature ranged between -30 and 60 °C. κ2 varied from 1.26% to 2.22%. The fabricated SAW filter exhibited good device performance with insertion loss of -33.853 dB and sidelobe attenuation of 20 dB when the wavelength was 60 mm (λ/4 = 15 μm) and the centre frequency was 90.34 MHz.",

author = "Jang, {Cheol Yeong} and Park, {Min Jung} and Ryu, {Sun Yeol} and Choi, {Hyun Chul} and Lee, {Jung Hee} and Lee, {Yong Hyun}",

year = "2002",

month = dec,

day = "1",

doi = "10.1002/pssc.200390035",

language = "English",

pages = "248--252",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "1",

note = "2nd International Workshop on Nitride Semiconductors, IWN 2002 ; Conference date: 22-07-2002 Through 25-07-2002",

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TY - JOUR

T1 - Fabrication and characteristics analysis of SAW filter using Al 0.36Ga0.64N thin film on sapphire substrate

AU - Jang, Cheol Yeong

AU - Park, Min Jung

AU - Ryu, Sun Yeol

AU - Choi, Hyun Chul

AU - Lee, Jung Hee

AU - Lee, Yong Hyun

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The surface acoustic wave (SAW) characteristics of AlxGa 1-xN thin films, such as velocity, electromechanical coupling coefficient κ2, temperature coefficient of frequency (TCF), and propagation loss, were investigated. AlxGa1-xN thin film was deposited on sapphire substrate by metal organic chemical vapour deposition and the Al mole fraction of x = 0.36 was measured using Rutherford backscattering spectroscopy. SAW velocity of 5510 m/s and TCF of -51.20 ppm/°C were measured when the κh value was 0.078 and temperature ranged between -30 and 60 °C. κ2 varied from 1.26% to 2.22%. The fabricated SAW filter exhibited good device performance with insertion loss of -33.853 dB and sidelobe attenuation of 20 dB when the wavelength was 60 mm (λ/4 = 15 μm) and the centre frequency was 90.34 MHz.

AB - The surface acoustic wave (SAW) characteristics of AlxGa 1-xN thin films, such as velocity, electromechanical coupling coefficient κ2, temperature coefficient of frequency (TCF), and propagation loss, were investigated. AlxGa1-xN thin film was deposited on sapphire substrate by metal organic chemical vapour deposition and the Al mole fraction of x = 0.36 was measured using Rutherford backscattering spectroscopy. SAW velocity of 5510 m/s and TCF of -51.20 ppm/°C were measured when the κh value was 0.078 and temperature ranged between -30 and 60 °C. κ2 varied from 1.26% to 2.22%. The fabricated SAW filter exhibited good device performance with insertion loss of -33.853 dB and sidelobe attenuation of 20 dB when the wavelength was 60 mm (λ/4 = 15 μm) and the centre frequency was 90.34 MHz.

UR - http://www.scopus.com/inward/record.url?scp=84875084389&partnerID=8YFLogxK

U2 - 10.1002/pssc.200390035

DO - 10.1002/pssc.200390035

M3 - Conference article

AN - SCOPUS:84875084389

SN - 1610-1634

SP - 248

EP - 252

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 1

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

Y2 - 22 July 2002 through 25 July 2002

ER -

Fabrication and characteristics analysis of SAW filter using Al _0.36Ga_0.64N thin film on sapphire substrate

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