Fabrication and characteristics analysis of SAW filter using Al 0.36Ga0.64N thin film on sapphire substrate

Cheol Yeong Jang; Min Jung Park; Sun Yeol Ryu; Hyun Chul Choi; Jung Hee Lee; Yong Hyun Lee

doi:10.1002/pssc.200390035

Fabrication and characteristics analysis of SAW filter using Al _0.36Ga_0.64N thin film on sapphire substrate

Cheol Yeong Jang
, Min Jung Park
, Sun Yeol Ryu
, Hyun Chul Choi
, Jung Hee Lee
, Yong Hyun Lee

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

The surface acoustic wave (SAW) characteristics of Al_xGa _1-xN thin films, such as velocity, electromechanical coupling coefficient κ², temperature coefficient of frequency (TCF), and propagation loss, were investigated. Al_xGa_1-xN thin film was deposited on sapphire substrate by metal organic chemical vapour deposition and the Al mole fraction of x = 0.36 was measured using Rutherford backscattering spectroscopy. SAW velocity of 5510 m/s and TCF of -51.20 ppm/°C were measured when the κh value was 0.078 and temperature ranged between -30 and 60 °C. κ² varied from 1.26% to 2.22%. The fabricated SAW filter exhibited good device performance with insertion loss of -33.853 dB and sidelobe attenuation of 20 dB when the wavelength was 60 mm (λ/4 = 15 μm) and the centre frequency was 90.34 MHz.

Original language	English
Pages (from-to)	248-252
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Issue number	1
DOIs	https://doi.org/10.1002/pssc.200390035
State	Published - 1 Dec 2002
Event	2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany Duration: 22 Jul 2002 → 25 Jul 2002

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@article{0af52d37f9dc4fc2a25bbf172f1cc078,

title = "Fabrication and characteristics analysis of SAW filter using Al 0.36Ga0.64N thin film on sapphire substrate",

abstract = "The surface acoustic wave (SAW) characteristics of AlxGa 1-xN thin films, such as velocity, electromechanical coupling coefficient κ2, temperature coefficient of frequency (TCF), and propagation loss, were investigated. AlxGa1-xN thin film was deposited on sapphire substrate by metal organic chemical vapour deposition and the Al mole fraction of x = 0.36 was measured using Rutherford backscattering spectroscopy. SAW velocity of 5510 m/s and TCF of -51.20 ppm/°C were measured when the κh value was 0.078 and temperature ranged between -30 and 60 °C. κ2 varied from 1.26\% to 2.22\%. The fabricated SAW filter exhibited good device performance with insertion loss of -33.853 dB and sidelobe attenuation of 20 dB when the wavelength was 60 mm (λ/4 = 15 μm) and the centre frequency was 90.34 MHz.",

author = "Jang, \{Cheol Yeong\} and Park, \{Min Jung\} and Ryu, \{Sun Yeol\} and Choi, \{Hyun Chul\} and Lee, \{Jung Hee\} and Lee, \{Yong Hyun\}",

year = "2002",

month = dec,

day = "1",

doi = "10.1002/pssc.200390035",

language = "English",

pages = "248--252",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "1",

note = "2nd International Workshop on Nitride Semiconductors, IWN 2002 ; Conference date: 22-07-2002 Through 25-07-2002",

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TY - JOUR

T1 - Fabrication and characteristics analysis of SAW filter using Al 0.36Ga0.64N thin film on sapphire substrate

AU - Jang, Cheol Yeong

AU - Park, Min Jung

AU - Ryu, Sun Yeol

AU - Choi, Hyun Chul

AU - Lee, Jung Hee

AU - Lee, Yong Hyun

PY - 2002/12/1

Y1 - 2002/12/1

N2 - The surface acoustic wave (SAW) characteristics of AlxGa 1-xN thin films, such as velocity, electromechanical coupling coefficient κ2, temperature coefficient of frequency (TCF), and propagation loss, were investigated. AlxGa1-xN thin film was deposited on sapphire substrate by metal organic chemical vapour deposition and the Al mole fraction of x = 0.36 was measured using Rutherford backscattering spectroscopy. SAW velocity of 5510 m/s and TCF of -51.20 ppm/°C were measured when the κh value was 0.078 and temperature ranged between -30 and 60 °C. κ2 varied from 1.26% to 2.22%. The fabricated SAW filter exhibited good device performance with insertion loss of -33.853 dB and sidelobe attenuation of 20 dB when the wavelength was 60 mm (λ/4 = 15 μm) and the centre frequency was 90.34 MHz.

AB - The surface acoustic wave (SAW) characteristics of AlxGa 1-xN thin films, such as velocity, electromechanical coupling coefficient κ2, temperature coefficient of frequency (TCF), and propagation loss, were investigated. AlxGa1-xN thin film was deposited on sapphire substrate by metal organic chemical vapour deposition and the Al mole fraction of x = 0.36 was measured using Rutherford backscattering spectroscopy. SAW velocity of 5510 m/s and TCF of -51.20 ppm/°C were measured when the κh value was 0.078 and temperature ranged between -30 and 60 °C. κ2 varied from 1.26% to 2.22%. The fabricated SAW filter exhibited good device performance with insertion loss of -33.853 dB and sidelobe attenuation of 20 dB when the wavelength was 60 mm (λ/4 = 15 μm) and the centre frequency was 90.34 MHz.

UR - https://www.scopus.com/pages/publications/84875084389

U2 - 10.1002/pssc.200390035

DO - 10.1002/pssc.200390035

M3 - Conference article

AN - SCOPUS:84875084389

SN - 1610-1634

SP - 248

EP - 252

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 1

T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002

Y2 - 22 July 2002 through 25 July 2002

ER -

Fabrication and characteristics analysis of SAW filter using Al _0.36Ga_0.64N thin film on sapphire substrate

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