Fabrication and gas sensing properties of vertically aligned Si nanowires

Ali Mirzaei; Sung Yong Kang; Sun Woo Choi; Yong Jung Kwon; Myung Sik Choi; Jae Hoon Bang; Sang Sub Kim; Hyoun Woo Kim

doi:10.1016/j.apsusc.2017.08.182

Fabrication and gas sensing properties of vertically aligned Si nanowires

Ali Mirzaei, Sung Yong Kang, Sun Woo Choi, Yong Jung Kwon, Myung Sik Choi, Jae Hoon Bang, Sang Sub Kim, Hyoun Woo Kim

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

In this study, a peculiar configuration for a gas sensor consisting of vertically aligned silicon nanowires (VA-Si NWs) synthesized by metal-assisted chemical etching (MACE) is reported. Si NWs were prepared via a facile MACE method and subsequent thermal annealing. Etching was performed by generation of silver nanoparticles (Ag NPs) and subsequent etching in HF/H ₂ O ₂ aqueous solution; the growth conditions were optimized by changing the process parameters. Highly vertically oriented arrays of Si NWs with a straight-line morphology were obtained, and a top–top electrode configuration was applied. The VA-Si NW gas sensor showed good sensing performance, and the VA-Si NWs exhibited a remarkable response (R _g /R _a = 11.5 ∼ 17.1) to H ₂ gas (10–50 ppm) at 100 °C which was the optimal working temperature. The formation mechanism and gas sensing mechanism of VA-Si NWs are described. The obtained results can suggest new approaches to making inexpensive, versatile, and portable sensors based on Si NWs having a novel top–top electrode structure that are fully compatible with well-developed Si technologies.

Original language	English
Pages (from-to)	215-226
Number of pages	12
Journal	Applied Surface Science
Volume	427
DOIs	https://doi.org/10.1016/j.apsusc.2017.08.182
State	Published - 1 Jan 2018

Keywords

Chemical etching
Gas sensors
Nanowires
Silicon

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10.1016/j.apsusc.2017.08.182

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@article{ecd58a5be4dd4faf957f0423087ff34c,

title = "Fabrication and gas sensing properties of vertically aligned Si nanowires",

abstract = " In this study, a peculiar configuration for a gas sensor consisting of vertically aligned silicon nanowires (VA-Si NWs) synthesized by metal-assisted chemical etching (MACE) is reported. Si NWs were prepared via a facile MACE method and subsequent thermal annealing. Etching was performed by generation of silver nanoparticles (Ag NPs) and subsequent etching in HF/H 2 O 2 aqueous solution; the growth conditions were optimized by changing the process parameters. Highly vertically oriented arrays of Si NWs with a straight-line morphology were obtained, and a top–top electrode configuration was applied. The VA-Si NW gas sensor showed good sensing performance, and the VA-Si NWs exhibited a remarkable response (R g /R a = 11.5 ∼ 17.1) to H 2 gas (10–50 ppm) at 100 °C which was the optimal working temperature. The formation mechanism and gas sensing mechanism of VA-Si NWs are described. The obtained results can suggest new approaches to making inexpensive, versatile, and portable sensors based on Si NWs having a novel top–top electrode structure that are fully compatible with well-developed Si technologies.",

keywords = "Chemical etching, Gas sensors, Nanowires, Silicon",

author = "Ali Mirzaei and Kang, {Sung Yong} and Choi, {Sun Woo} and Kwon, {Yong Jung} and Choi, {Myung Sik} and Bang, {Jae Hoon} and Kim, {Sang Sub} and Kim, {Hyoun Woo}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2018",

month = jan,

day = "1",

doi = "10.1016/j.apsusc.2017.08.182",

language = "English",

volume = "427",

pages = "215--226",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Fabrication and gas sensing properties of vertically aligned Si nanowires

AU - Mirzaei, Ali

AU - Kang, Sung Yong

AU - Choi, Sun Woo

AU - Kwon, Yong Jung

AU - Choi, Myung Sik

AU - Bang, Jae Hoon

AU - Kim, Sang Sub

AU - Kim, Hyoun Woo

PY - 2018/1/1

Y1 - 2018/1/1

N2 - In this study, a peculiar configuration for a gas sensor consisting of vertically aligned silicon nanowires (VA-Si NWs) synthesized by metal-assisted chemical etching (MACE) is reported. Si NWs were prepared via a facile MACE method and subsequent thermal annealing. Etching was performed by generation of silver nanoparticles (Ag NPs) and subsequent etching in HF/H 2 O 2 aqueous solution; the growth conditions were optimized by changing the process parameters. Highly vertically oriented arrays of Si NWs with a straight-line morphology were obtained, and a top–top electrode configuration was applied. The VA-Si NW gas sensor showed good sensing performance, and the VA-Si NWs exhibited a remarkable response (R g /R a = 11.5 ∼ 17.1) to H 2 gas (10–50 ppm) at 100 °C which was the optimal working temperature. The formation mechanism and gas sensing mechanism of VA-Si NWs are described. The obtained results can suggest new approaches to making inexpensive, versatile, and portable sensors based on Si NWs having a novel top–top electrode structure that are fully compatible with well-developed Si technologies.

AB - In this study, a peculiar configuration for a gas sensor consisting of vertically aligned silicon nanowires (VA-Si NWs) synthesized by metal-assisted chemical etching (MACE) is reported. Si NWs were prepared via a facile MACE method and subsequent thermal annealing. Etching was performed by generation of silver nanoparticles (Ag NPs) and subsequent etching in HF/H 2 O 2 aqueous solution; the growth conditions were optimized by changing the process parameters. Highly vertically oriented arrays of Si NWs with a straight-line morphology were obtained, and a top–top electrode configuration was applied. The VA-Si NW gas sensor showed good sensing performance, and the VA-Si NWs exhibited a remarkable response (R g /R a = 11.5 ∼ 17.1) to H 2 gas (10–50 ppm) at 100 °C which was the optimal working temperature. The formation mechanism and gas sensing mechanism of VA-Si NWs are described. The obtained results can suggest new approaches to making inexpensive, versatile, and portable sensors based on Si NWs having a novel top–top electrode structure that are fully compatible with well-developed Si technologies.

KW - Chemical etching

KW - Gas sensors

KW - Nanowires

KW - Silicon

UR - http://www.scopus.com/inward/record.url?scp=85028752714&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2017.08.182

DO - 10.1016/j.apsusc.2017.08.182

M3 - Article

AN - SCOPUS:85028752714

SN - 0169-4332

VL - 427

SP - 215

EP - 226

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Fabrication and gas sensing properties of vertically aligned Si nanowires

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Keywords

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