Fabrication of a novel polysilicon lateral field emission triode with a high current density and high-transconductance

A lateral polysilicon field emission triode array is fabricated using silicon on insulator (SOI) structure and a LOCOS (local oxidation of polysilicon) process. The triode fabrication procedure is similar to that of the lateral field emission diode array. A buried silicon dioxide is grown on a p-type silicon substrate using wet thermal oxidation. An n⁺ doped polysilicon layer is deposited by low pressure chemical vapor deposition. Scanning electron microscopy and current voltage characterizations are also performed for the evaluations.