Fabrication of a separation by implantation of oxygen silicon nano-gap using thin film stress

Dong Il Park; Woo Jae Zang; Jong Hyun Lee; Jung Hee Lee; Sung Ho Hahm

doi:10.1143/jjap.37.7205

Fabrication of a separation by implantation of oxygen silicon nano-gap using thin film stress

Dong Il Park, Woo Jae Zang, Jong Hyun Lee, Jung Hee Lee, Sung Ho Hahm

School of Electronics Engineering

Kyungpook National University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have fabricated and controlled a novel nanometer scale silicon gap in a separation by implantation of oxygen (SIMOX) structure using the thin film stress generated during high temperature annealing and cooling, and then elucidated the formation mechanism and crystal orientation dependency of the gaps. The technique is very simple and controllable in shaping a wedge type nano-structure with a several hundred-nanometer gap. The fabricated structure has a 190 and 250 nm narrow gap with 2 μm and 11 μm side etching of the buried SiO₂, respectively.

Original language	English
Pages (from-to)	7205-7207
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	12 B
DOIs	https://doi.org/10.1143/jjap.37.7205
State	Published - 1998

Keywords

Field emission device
Nano-meter gap
Silicon
SIMOX
Thermal stress

Access to Document

10.1143/jjap.37.7205

Cite this

@article{207b179cefe14f7c894290198a57236c,

title = "Fabrication of a separation by implantation of oxygen silicon nano-gap using thin film stress",

abstract = "We have fabricated and controlled a novel nanometer scale silicon gap in a separation by implantation of oxygen (SIMOX) structure using the thin film stress generated during high temperature annealing and cooling, and then elucidated the formation mechanism and crystal orientation dependency of the gaps. The technique is very simple and controllable in shaping a wedge type nano-structure with a several hundred-nanometer gap. The fabricated structure has a 190 and 250 nm narrow gap with 2 μm and 11 μm side etching of the buried SiO2, respectively.",

keywords = "Field emission device, Nano-meter gap, Silicon, SIMOX, Thermal stress",

author = "Park, {Dong Il} and Zang, {Woo Jae} and Lee, {Jong Hyun} and Lee, {Jung Hee} and Hahm, {Sung Ho}",

year = "1998",

doi = "10.1143/jjap.37.7205",

language = "English",

volume = "37",

pages = "7205--7207",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "12 B",

}

TY - JOUR

T1 - Fabrication of a separation by implantation of oxygen silicon nano-gap using thin film stress

AU - Park, Dong Il

AU - Zang, Woo Jae

AU - Lee, Jong Hyun

AU - Lee, Jung Hee

AU - Hahm, Sung Ho

PY - 1998

Y1 - 1998

N2 - We have fabricated and controlled a novel nanometer scale silicon gap in a separation by implantation of oxygen (SIMOX) structure using the thin film stress generated during high temperature annealing and cooling, and then elucidated the formation mechanism and crystal orientation dependency of the gaps. The technique is very simple and controllable in shaping a wedge type nano-structure with a several hundred-nanometer gap. The fabricated structure has a 190 and 250 nm narrow gap with 2 μm and 11 μm side etching of the buried SiO2, respectively.

AB - We have fabricated and controlled a novel nanometer scale silicon gap in a separation by implantation of oxygen (SIMOX) structure using the thin film stress generated during high temperature annealing and cooling, and then elucidated the formation mechanism and crystal orientation dependency of the gaps. The technique is very simple and controllable in shaping a wedge type nano-structure with a several hundred-nanometer gap. The fabricated structure has a 190 and 250 nm narrow gap with 2 μm and 11 μm side etching of the buried SiO2, respectively.

KW - Field emission device

KW - Nano-meter gap

KW - Silicon

KW - SIMOX

KW - Thermal stress

UR - http://www.scopus.com/inward/record.url?scp=19644396152&partnerID=8YFLogxK

U2 - 10.1143/jjap.37.7205

DO - 10.1143/jjap.37.7205

M3 - Article

AN - SCOPUS:19644396152

SN - 0021-4922

VL - 37

SP - 7205

EP - 7207

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 12 B

ER -

Fabrication of a separation by implantation of oxygen silicon nano-gap using thin film stress

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this