Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution

Dong Hyeok Son; Young Woo Jo; Ryun Hwi Kim; Chan Heo; Jae Hwa Seo; Jin Su Kim; In Man Kang; Sorin Cristoloveanu; Jung Hee Lee

doi:10.1109/ESSDERC.2015.7324730

Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution

Dong Hyeok Son, Young Woo Jo, Ryun Hwi Kim, Chan Heo, Jae Hwa Seo, Jin Su Kim, In Man Kang, Sorin Cristoloveanu, Jung Hee Lee

School of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

AlGaN/GaN-based fin-shaped field-effect transistors (FinFETs) with very steep sidewall and various fin-widths (Wfin) have been fabricated by utilizing electron-beam lithography and additional anisotropic sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The device with Wfin of 180 nm exhibits normally-on performance with threshold voltage of -3.5 V and extremely broad transconductance (gm) characteristic ranging from -2 to ∼ 3 V at Vd = 5 V which is essential for high linearity device performance. This broad gm characteristic is because the current from the side-wall MOS channel becomes comparable to that from the two-dimensional electron gas (2DEG) channel and hence significantly contributes to the total device current. On the other hand, devices with smaller Wfin = 50 and 100 nm exhibit normally-off performance with positive threshold voltage of 2.0 and 0.6 V, respectively, and less broad gm characteristics because the current from the side-wall MOS channel dominates the total device current.

Original language	English
Title of host publication	ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference
Editors	Tibor Grasser, Wolfgang Pribyl, Martin Schrems
Publisher	Editions Frontieres
Pages	130-133
Number of pages	4
ISBN (Electronic)	9781467371339
DOIs	https://doi.org/10.1109/ESSDERC.2015.7324730
State	Published - 10 Nov 2015
Event	45th European Solid-State Device Research Conference, ESSDERC 2015 - Graz, Austria Duration: 14 Sep 2015 → 18 Sep 2015

Publication series

Name	European Solid-State Device Research Conference
Volume	2015-November
ISSN (Print)	1930-8876

Conference

Conference	45th European Solid-State Device Research Conference, ESSDERC 2015
Country/Territory	Austria
City	Graz
Period	14/09/15 → 18/09/15

Keywords

2DEG channel
AlGaN/GaN
FinFET
TMAH wet etch
sidewall MOS channel

Access to Document

10.1109/ESSDERC.2015.7324730

Cite this

Son, D. H., Jo, Y. W., Kim, R. H., Heo, C., Seo, J. H., Kim, J. S., Kang, I. M., Cristoloveanu, S., & Lee, J. H. (2015). Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. In T. Grasser, W. Pribyl, & M. Schrems (Eds.), ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference (pp. 130-133). Article 7324730 (European Solid-State Device Research Conference; Vol. 2015-November). Editions Frontieres. https://doi.org/10.1109/ESSDERC.2015.7324730

Son, Dong Hyeok ; Jo, Young Woo ; Kim, Ryun Hwi et al. / Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference. editor / Tibor Grasser ; Wolfgang Pribyl ; Martin Schrems. Editions Frontieres, 2015. pp. 130-133 (European Solid-State Device Research Conference).

@inproceedings{77f34fc6e3cc4ad6a0dd8bbadf2a1657,

title = "Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution",

abstract = "AlGaN/GaN-based fin-shaped field-effect transistors (FinFETs) with very steep sidewall and various fin-widths (Wfin) have been fabricated by utilizing electron-beam lithography and additional anisotropic sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The device with Wfin of 180 nm exhibits normally-on performance with threshold voltage of -3.5 V and extremely broad transconductance (gm) characteristic ranging from -2 to ∼ 3 V at Vd = 5 V which is essential for high linearity device performance. This broad gm characteristic is because the current from the side-wall MOS channel becomes comparable to that from the two-dimensional electron gas (2DEG) channel and hence significantly contributes to the total device current. On the other hand, devices with smaller Wfin = 50 and 100 nm exhibit normally-off performance with positive threshold voltage of 2.0 and 0.6 V, respectively, and less broad gm characteristics because the current from the side-wall MOS channel dominates the total device current.",

keywords = "2DEG channel, AlGaN/GaN, FinFET, TMAH wet etch, sidewall MOS channel",

author = "Son, \{Dong Hyeok\} and Jo, \{Young Woo\} and Kim, \{Ryun Hwi\} and Chan Heo and Seo, \{Jae Hwa\} and Kim, \{Jin Su\} and Kang, \{In Man\} and Sorin Cristoloveanu and Lee, \{Jung Hee\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 45th European Solid-State Device Research Conference, ESSDERC 2015 ; Conference date: 14-09-2015 Through 18-09-2015",

year = "2015",

month = nov,

day = "10",

doi = "10.1109/ESSDERC.2015.7324730",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "Editions Frontieres",

pages = "130--133",

editor = "Tibor Grasser and Wolfgang Pribyl and Martin Schrems",

booktitle = "ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference",

}

Son, DH, Jo, YW, Kim, RH, Heo, C, Seo, JH, Kim, JS, Kang, IM, Cristoloveanu, S & Lee, JH 2015, Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. in T Grasser, W Pribyl & M Schrems (eds), ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference., 7324730, European Solid-State Device Research Conference, vol. 2015-November, Editions Frontieres, pp. 130-133, 45th European Solid-State Device Research Conference, ESSDERC 2015, Graz, Austria, 14/09/15. https://doi.org/10.1109/ESSDERC.2015.7324730

Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. / Son, Dong Hyeok; Jo, Young Woo; Kim, Ryun Hwi et al.
ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference. ed. / Tibor Grasser; Wolfgang Pribyl; Martin Schrems. Editions Frontieres, 2015. p. 130-133 7324730 (European Solid-State Device Research Conference; Vol. 2015-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution

AU - Son, Dong Hyeok

AU - Jo, Young Woo

AU - Kim, Ryun Hwi

AU - Heo, Chan

AU - Seo, Jae Hwa

AU - Kim, Jin Su

AU - Kang, In Man

AU - Cristoloveanu, Sorin

AU - Lee, Jung Hee

PY - 2015/11/10

Y1 - 2015/11/10

N2 - AlGaN/GaN-based fin-shaped field-effect transistors (FinFETs) with very steep sidewall and various fin-widths (Wfin) have been fabricated by utilizing electron-beam lithography and additional anisotropic sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The device with Wfin of 180 nm exhibits normally-on performance with threshold voltage of -3.5 V and extremely broad transconductance (gm) characteristic ranging from -2 to ∼ 3 V at Vd = 5 V which is essential for high linearity device performance. This broad gm characteristic is because the current from the side-wall MOS channel becomes comparable to that from the two-dimensional electron gas (2DEG) channel and hence significantly contributes to the total device current. On the other hand, devices with smaller Wfin = 50 and 100 nm exhibit normally-off performance with positive threshold voltage of 2.0 and 0.6 V, respectively, and less broad gm characteristics because the current from the side-wall MOS channel dominates the total device current.

AB - AlGaN/GaN-based fin-shaped field-effect transistors (FinFETs) with very steep sidewall and various fin-widths (Wfin) have been fabricated by utilizing electron-beam lithography and additional anisotropic sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The device with Wfin of 180 nm exhibits normally-on performance with threshold voltage of -3.5 V and extremely broad transconductance (gm) characteristic ranging from -2 to ∼ 3 V at Vd = 5 V which is essential for high linearity device performance. This broad gm characteristic is because the current from the side-wall MOS channel becomes comparable to that from the two-dimensional electron gas (2DEG) channel and hence significantly contributes to the total device current. On the other hand, devices with smaller Wfin = 50 and 100 nm exhibit normally-off performance with positive threshold voltage of 2.0 and 0.6 V, respectively, and less broad gm characteristics because the current from the side-wall MOS channel dominates the total device current.

KW - 2DEG channel

KW - AlGaN/GaN

KW - FinFET

KW - TMAH wet etch

KW - sidewall MOS channel

UR - https://www.scopus.com/pages/publications/84959319397

U2 - 10.1109/ESSDERC.2015.7324730

DO - 10.1109/ESSDERC.2015.7324730

M3 - Conference contribution

AN - SCOPUS:84959319397

T3 - European Solid-State Device Research Conference

SP - 130

EP - 133

BT - ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference

A2 - Grasser, Tibor

A2 - Pribyl, Wolfgang

A2 - Schrems, Martin

PB - Editions Frontieres

T2 - 45th European Solid-State Device Research Conference, ESSDERC 2015

Y2 - 14 September 2015 through 18 September 2015

ER -

Son DH, Jo YW, Kim RH, Heo C, Seo JH, Kim JS et al. Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. In Grasser T, Pribyl W, Schrems M, editors, ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference. Editions Frontieres. 2015. p. 130-133. 7324730. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2015.7324730

Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution

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