Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution

Dong Hyeok Son; Young Woo Jo; Ryun Hwi Kim; Chan Heo; Jae Hwa Seo; Jin Su Kim; In Man Kang; Sorin Cristoloveanu; Jung Hee Lee

doi:10.1109/ESSDERC.2015.7324730

Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution

Dong Hyeok Son
, Young Woo Jo
, Ryun Hwi Kim
, Chan Heo
, Jae Hwa Seo
, Jin Su Kim
, In Man Kang
, Sorin Cristoloveanu
, Jung Hee Lee

School of Electronics Engineering

Kyungpook National University
MINATEC

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

13 Scopus citations

Abstract

AlGaN/GaN-based fin-shaped field-effect transistors (FinFETs) with very steep sidewall and various fin-widths (Wfin) have been fabricated by utilizing electron-beam lithography and additional anisotropic sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The device with Wfin of 180 nm exhibits normally-on performance with threshold voltage of -3.5 V and extremely broad transconductance (gm) characteristic ranging from -2 to ∼ 3 V at Vd = 5 V which is essential for high linearity device performance. This broad gm characteristic is because the current from the side-wall MOS channel becomes comparable to that from the two-dimensional electron gas (2DEG) channel and hence significantly contributes to the total device current. On the other hand, devices with smaller Wfin = 50 and 100 nm exhibit normally-off performance with positive threshold voltage of 2.0 and 0.6 V, respectively, and less broad gm characteristics because the current from the side-wall MOS channel dominates the total device current.

Original language	English
Title of host publication	ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference
Editors	Tibor Grasser, Wolfgang Pribyl, Martin Schrems
Publisher	Editions Frontieres
Pages	130-133
Number of pages	4
ISBN (Electronic)	9781467371339
DOIs	https://doi.org/10.1109/ESSDERC.2015.7324730
State	Published - 10 Nov 2015
Event	45th European Solid-State Device Research Conference, ESSDERC 2015 - Graz, Austria Duration: 14 Sep 2015 → 18 Sep 2015

Publication series

Name	European Solid-State Device Research Conference
Volume	2015-November
ISSN (Print)	1930-8876

Conference

Conference	45th European Solid-State Device Research Conference, ESSDERC 2015
Country/Territory	Austria
City	Graz
Period	14/09/15 → 18/09/15

Keywords

2DEG channel
AlGaN/GaN
FinFET
TMAH wet etch
sidewall MOS channel

Access to Document

10.1109/ESSDERC.2015.7324730

Cite this

Son, D. H., Jo, Y. W., Kim, R. H., Heo, C., Seo, J. H., Kim, J. S., Kang, I. M., Cristoloveanu, S., & Lee, J. H. (2015). Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. In T. Grasser, W. Pribyl, & M. Schrems (Eds.), ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference (pp. 130-133). Article 7324730 (European Solid-State Device Research Conference; Vol. 2015-November). Editions Frontieres. https://doi.org/10.1109/ESSDERC.2015.7324730

Son, Dong Hyeok ; Jo, Young Woo ; Kim, Ryun Hwi et al. / Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference. editor / Tibor Grasser ; Wolfgang Pribyl ; Martin Schrems. Editions Frontieres, 2015. pp. 130-133 (European Solid-State Device Research Conference).

@inproceedings{77f34fc6e3cc4ad6a0dd8bbadf2a1657,

title = "Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution",

abstract = "AlGaN/GaN-based fin-shaped field-effect transistors (FinFETs) with very steep sidewall and various fin-widths (Wfin) have been fabricated by utilizing electron-beam lithography and additional anisotropic sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The device with Wfin of 180 nm exhibits normally-on performance with threshold voltage of -3.5 V and extremely broad transconductance (gm) characteristic ranging from -2 to ∼ 3 V at Vd = 5 V which is essential for high linearity device performance. This broad gm characteristic is because the current from the side-wall MOS channel becomes comparable to that from the two-dimensional electron gas (2DEG) channel and hence significantly contributes to the total device current. On the other hand, devices with smaller Wfin = 50 and 100 nm exhibit normally-off performance with positive threshold voltage of 2.0 and 0.6 V, respectively, and less broad gm characteristics because the current from the side-wall MOS channel dominates the total device current.",

keywords = "2DEG channel, AlGaN/GaN, FinFET, TMAH wet etch, sidewall MOS channel",

author = "Son, \{Dong Hyeok\} and Jo, \{Young Woo\} and Kim, \{Ryun Hwi\} and Chan Heo and Seo, \{Jae Hwa\} and Kim, \{Jin Su\} and Kang, \{In Man\} and Sorin Cristoloveanu and Lee, \{Jung Hee\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 45th European Solid-State Device Research Conference, ESSDERC 2015 ; Conference date: 14-09-2015 Through 18-09-2015",

year = "2015",

month = nov,

day = "10",

doi = "10.1109/ESSDERC.2015.7324730",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "Editions Frontieres",

pages = "130--133",

editor = "Tibor Grasser and Wolfgang Pribyl and Martin Schrems",

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}

Son, DH, Jo, YW, Kim, RH, Heo, C, Seo, JH, Kim, JS, Kang, IM, Cristoloveanu, S & Lee, JH 2015, Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. in T Grasser, W Pribyl & M Schrems (eds), ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference., 7324730, European Solid-State Device Research Conference, vol. 2015-November, Editions Frontieres, pp. 130-133, 45th European Solid-State Device Research Conference, ESSDERC 2015, Graz, Austria, 14/09/15. https://doi.org/10.1109/ESSDERC.2015.7324730

Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. / Son, Dong Hyeok; Jo, Young Woo; Kim, Ryun Hwi et al.
ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference. ed. / Tibor Grasser; Wolfgang Pribyl; Martin Schrems. Editions Frontieres, 2015. p. 130-133 7324730 (European Solid-State Device Research Conference; Vol. 2015-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution

AU - Son, Dong Hyeok

AU - Jo, Young Woo

AU - Kim, Ryun Hwi

AU - Heo, Chan

AU - Seo, Jae Hwa

AU - Kim, Jin Su

AU - Kang, In Man

AU - Cristoloveanu, Sorin

AU - Lee, Jung Hee

PY - 2015/11/10

Y1 - 2015/11/10

N2 - AlGaN/GaN-based fin-shaped field-effect transistors (FinFETs) with very steep sidewall and various fin-widths (Wfin) have been fabricated by utilizing electron-beam lithography and additional anisotropic sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The device with Wfin of 180 nm exhibits normally-on performance with threshold voltage of -3.5 V and extremely broad transconductance (gm) characteristic ranging from -2 to ∼ 3 V at Vd = 5 V which is essential for high linearity device performance. This broad gm characteristic is because the current from the side-wall MOS channel becomes comparable to that from the two-dimensional electron gas (2DEG) channel and hence significantly contributes to the total device current. On the other hand, devices with smaller Wfin = 50 and 100 nm exhibit normally-off performance with positive threshold voltage of 2.0 and 0.6 V, respectively, and less broad gm characteristics because the current from the side-wall MOS channel dominates the total device current.

AB - AlGaN/GaN-based fin-shaped field-effect transistors (FinFETs) with very steep sidewall and various fin-widths (Wfin) have been fabricated by utilizing electron-beam lithography and additional anisotropic sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The device with Wfin of 180 nm exhibits normally-on performance with threshold voltage of -3.5 V and extremely broad transconductance (gm) characteristic ranging from -2 to ∼ 3 V at Vd = 5 V which is essential for high linearity device performance. This broad gm characteristic is because the current from the side-wall MOS channel becomes comparable to that from the two-dimensional electron gas (2DEG) channel and hence significantly contributes to the total device current. On the other hand, devices with smaller Wfin = 50 and 100 nm exhibit normally-off performance with positive threshold voltage of 2.0 and 0.6 V, respectively, and less broad gm characteristics because the current from the side-wall MOS channel dominates the total device current.

KW - 2DEG channel

KW - AlGaN/GaN

KW - FinFET

KW - TMAH wet etch

KW - sidewall MOS channel

UR - https://www.scopus.com/pages/publications/84959319397

U2 - 10.1109/ESSDERC.2015.7324730

DO - 10.1109/ESSDERC.2015.7324730

M3 - Conference contribution

AN - SCOPUS:84959319397

T3 - European Solid-State Device Research Conference

SP - 130

EP - 133

BT - ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference

A2 - Grasser, Tibor

A2 - Pribyl, Wolfgang

A2 - Schrems, Martin

PB - Editions Frontieres

T2 - 45th European Solid-State Device Research Conference, ESSDERC 2015

Y2 - 14 September 2015 through 18 September 2015

ER -

Son DH, Jo YW, Kim RH, Heo C, Seo JH, Kim JS et al. Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution. In Grasser T, Pribyl W, Schrems M, editors, ESSDERC 2015 - Proceedings of the 45th European Solid-State Device Research Conference. Editions Frontieres. 2015. p. 130-133. 7324730. (European Solid-State Device Research Conference). doi: 10.1109/ESSDERC.2015.7324730

Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution

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Keywords

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