Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes

Hyuck Soo Yang; Sang Youn Han; Y. W. Heo; K. H. Baik; D. P. Norton; S. J. Pearton; F. Ren; A. Osinsky; J. W. Dong; B. Hertog; A. M. Dabiran; P. P. Chow; L. Chernyak; T. Steiner; C. J. Kao; G. C. Chi

doi:10.1143/JJAP.44.7296

Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes

Hyuck Soo Yang, Sang Youn Han, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton, F. Ren, A. Osinsky, J. W. Dong, B. Hertog, A. M. Dabiran, P. P. Chow, L. Chernyak, T. Steiner, C. J. Kao, G. C. Chi

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Abstract

We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO/n-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/p-GaN c-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370°C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices.

Original language	English
Pages (from-to)	7296-7300
Number of pages	5
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	10
DOIs	https://doi.org/10.1143/JJAP.44.7296
State	Published - 11 Oct 2005

Keywords

GaN
Heterostructure
Light-emitting diodes (LEDs)
UV emitter
ZnO

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Yang, H. S., Han, S. Y., Heo, Y. W., Baik, K. H., Norton, D. P., Pearton, S. J., Ren, F., Osinsky, A., Dong, J. W., Hertog, B., Dabiran, A. M., Chow, P. P., Chernyak, L., Steiner, T., Kao, C. J., & Chi, G. C. (2005). Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(10), 7296-7300. https://doi.org/10.1143/JJAP.44.7296

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title = "Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes",

abstract = "We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO/n-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/p-GaN c-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370°C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices.",

keywords = "GaN, Heterostructure, Light-emitting diodes (LEDs), UV emitter, ZnO",

author = "Yang, {Hyuck Soo} and Han, {Sang Youn} and Heo, {Y. W.} and Baik, {K. H.} and Norton, {D. P.} and Pearton, {S. J.} and F. Ren and A. Osinsky and Dong, {J. W.} and B. Hertog and Dabiran, {A. M.} and Chow, {P. P.} and L. Chernyak and T. Steiner and Kao, {C. J.} and Chi, {G. C.}",

year = "2005",

month = oct,

day = "11",

doi = "10.1143/JJAP.44.7296",

language = "English",

volume = "44",

pages = "7296--7300",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10",

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Yang, HS, Han, SY, Heo, YW, Baik, KH, Norton, DP, Pearton, SJ, Ren, F, Osinsky, A, Dong, JW, Hertog, B, Dabiran, AM, Chow, PP, Chernyak, L, Steiner, T, Kao, CJ & Chi, GC 2005, 'Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 44, no. 10, pp. 7296-7300. https://doi.org/10.1143/JJAP.44.7296

TY - JOUR

T1 - Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes

AU - Yang, Hyuck Soo

AU - Han, Sang Youn

AU - Heo, Y. W.

AU - Baik, K. H.

AU - Norton, D. P.

AU - Pearton, S. J.

AU - Ren, F.

AU - Osinsky, A.

AU - Dong, J. W.

AU - Hertog, B.

AU - Dabiran, A. M.

AU - Chow, P. P.

AU - Chernyak, L.

AU - Steiner, T.

AU - Kao, C. J.

AU - Chi, G. C.

PY - 2005/10/11

Y1 - 2005/10/11

N2 - We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO/n-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/p-GaN c-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370°C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices.

AB - We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO/n-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/p-GaN c-plane sapphire templates. Cross-sectional transmission electron microscopy showed single-crystal quality of the pseudomorphically grown ZnO active region of the device. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370°C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices.

KW - GaN

KW - Heterostructure

KW - Light-emitting diodes (LEDs)

KW - UV emitter

KW - ZnO

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U2 - 10.1143/JJAP.44.7296

DO - 10.1143/JJAP.44.7296

M3 - Article

AN - SCOPUS:31544434282

SN - 0021-4922

VL - 44

SP - 7296

EP - 7300

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 10

ER -

Fabrication of hybrid n-ZnMgO/n-ZnO/p-AlGaN/p-GaN light-emitting diodes

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