Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching

T. W. Kim, J. I. Song, J. H. Jang, D. H. Kim, S. D. Park, J. W. Bae, G. Y. Yeom

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Fingerprint

Dive into the research topics of 'Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching'. Together they form a unique fingerprint.

Material Science