Fabrication of Oxidized Porous Silicon (OPS) air-bridge for RF application using micromachining technology

Y. M. Kim; K. Y. Noh; J. Y. Park; J. H. Lee; Y. D. Kim; I. S. Yu; C. S. Cho

Fabrication of Oxidized Porous Silicon (OPS) air-bridge for RF application using micromachining technology

Y. M. Kim
, K. Y. Noh
, J. Y. Park
, J. H. Lee
, Y. D. Kim
, I. S. Yu
, C. S. Cho

School of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This report proposes a novel thick oxide air-bridge structure fabricated by anodic reaction, multistep thermal oxidation, and micromachining technology using TMAH etching. This structure is stable because of thick oxide layer, and is expected to solve the problem of high dielectric loss of silicon on RF region.

Original language	English
Pages (from-to)	S268-S270
Journal	Journal of the Korean Physical Society
Volume	39
Issue number	SUPPL. Part 1
State	Published - Dec 2001

Cite this

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title = "Fabrication of Oxidized Porous Silicon (OPS) air-bridge for RF application using micromachining technology",

abstract = "This report proposes a novel thick oxide air-bridge structure fabricated by anodic reaction, multistep thermal oxidation, and micromachining technology using TMAH etching. This structure is stable because of thick oxide layer, and is expected to solve the problem of high dielectric loss of silicon on RF region.",

author = "Kim, \{Y. M.\} and Noh, \{K. Y.\} and Park, \{J. Y.\} and Lee, \{J. H.\} and Kim, \{Y. D.\} and Yu, \{I. S.\} and Cho, \{C. S.\}",

year = "2001",

month = dec,

language = "English",

volume = "39",

pages = "S268--S270",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL. Part 1",

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TY - JOUR

T1 - Fabrication of Oxidized Porous Silicon (OPS) air-bridge for RF application using micromachining technology

AU - Kim, Y. M.

AU - Noh, K. Y.

AU - Park, J. Y.

AU - Lee, J. H.

AU - Kim, Y. D.

AU - Yu, I. S.

AU - Cho, C. S.

PY - 2001/12

Y1 - 2001/12

N2 - This report proposes a novel thick oxide air-bridge structure fabricated by anodic reaction, multistep thermal oxidation, and micromachining technology using TMAH etching. This structure is stable because of thick oxide layer, and is expected to solve the problem of high dielectric loss of silicon on RF region.

AB - This report proposes a novel thick oxide air-bridge structure fabricated by anodic reaction, multistep thermal oxidation, and micromachining technology using TMAH etching. This structure is stable because of thick oxide layer, and is expected to solve the problem of high dielectric loss of silicon on RF region.

UR - https://www.scopus.com/pages/publications/0035542161

M3 - Article

AN - SCOPUS:0035542161

SN - 0374-4884

VL - 39

SP - S268-S270

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. Part 1

ER -

Fabrication of Oxidized Porous Silicon (OPS) air-bridge for RF application using micromachining technology

Abstract

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