Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

Sang Yun Sung; Se Yun Kim; Kwang Min Jo; Joon Hyung Lee; Jeong Joo Kim; Sang Gon Kim; Kyoung Hoon Chai; S. J. Pearton; D. P. Norton; Young Woo Heo

doi:10.1063/1.3521310

Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

Sang Yun Sung, Se Yun Kim, Kwang Min Jo, Joon Hyung Lee, Jeong Joo Kim, Sang Gon Kim, Kyoung Hoon Chai, S. J. Pearton, D. P. Norton, Young Woo Heo

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Abstract

We investigated copper oxides for use as an active layer of p-channel field-effect thin-film transistors (TFTs). Cu₂ O thin films deposited at room temperature using rf magnetron sputtering were transformed to a CuO phase after an annealing treatment in air above 200 °C. The optical bandgaps of the Cu₂ O and CuO were 2.44 and 1.41 eV, respectively. The bottom gate structured TFTs fabricated using CuO active layers operated in a p-type enhancement mode with an on/off ratio of ∼ 10⁴ and field-effect mobility of 0.4 cm² /V·s.

Original language	English
Article number	222109
Journal	Applied Physics Letters
Volume	97
Issue number	22
DOIs	https://doi.org/10.1063/1.3521310
State	Published - 29 Nov 2010

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title = "Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature",

abstract = "We investigated copper oxides for use as an active layer of p-channel field-effect thin-film transistors (TFTs). Cu2 O thin films deposited at room temperature using rf magnetron sputtering were transformed to a CuO phase after an annealing treatment in air above 200 °C. The optical bandgaps of the Cu2 O and CuO were 2.44 and 1.41 eV, respectively. The bottom gate structured TFTs fabricated using CuO active layers operated in a p-type enhancement mode with an on/off ratio of ∼ 104 and field-effect mobility of 0.4 cm2 /V·s.",

author = "Sung, {Sang Yun} and Kim, {Se Yun} and Jo, {Kwang Min} and Lee, {Joon Hyung} and Kim, {Jeong Joo} and Kim, {Sang Gon} and Chai, {Kyoung Hoon} and Pearton, {S. J.} and Norton, {D. P.} and Heo, {Young Woo}",

year = "2010",

month = nov,

day = "29",

doi = "10.1063/1.3521310",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

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T1 - Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

AU - Sung, Sang Yun

AU - Kim, Se Yun

AU - Jo, Kwang Min

AU - Lee, Joon Hyung

AU - Kim, Jeong Joo

AU - Kim, Sang Gon

AU - Chai, Kyoung Hoon

AU - Pearton, S. J.

AU - Norton, D. P.

AU - Heo, Young Woo

PY - 2010/11/29

Y1 - 2010/11/29

N2 - We investigated copper oxides for use as an active layer of p-channel field-effect thin-film transistors (TFTs). Cu2 O thin films deposited at room temperature using rf magnetron sputtering were transformed to a CuO phase after an annealing treatment in air above 200 °C. The optical bandgaps of the Cu2 O and CuO were 2.44 and 1.41 eV, respectively. The bottom gate structured TFTs fabricated using CuO active layers operated in a p-type enhancement mode with an on/off ratio of ∼ 104 and field-effect mobility of 0.4 cm2 /V·s.

AB - We investigated copper oxides for use as an active layer of p-channel field-effect thin-film transistors (TFTs). Cu2 O thin films deposited at room temperature using rf magnetron sputtering were transformed to a CuO phase after an annealing treatment in air above 200 °C. The optical bandgaps of the Cu2 O and CuO were 2.44 and 1.41 eV, respectively. The bottom gate structured TFTs fabricated using CuO active layers operated in a p-type enhancement mode with an on/off ratio of ∼ 104 and field-effect mobility of 0.4 cm2 /V·s.

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DO - 10.1063/1.3521310

M3 - Article

AN - SCOPUS:78650653090

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222109

ER -

Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

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