Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

Sang Yun Sung; Se Yun Kim; Kwang Min Jo; Joon Hyung Lee; Jeong Joo Kim; Sang Gon Kim; Kyoung Hoon Chai; S. J. Pearton; D. P. Norton; Young Woo Heo

doi:10.1063/1.3521310

Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

Sang Yun Sung
, Se Yun Kim
, Kwang Min Jo
, Joon Hyung Lee
, Jeong Joo Kim
, Sang Gon Kim
, Kyoung Hoon Chai
, S. J. Pearton
, D. P. Norton
, Young Woo Heo

Kyungpook National University
LG Corporation
University of Florida

Research output: Contribution to journal › Article › peer-review

114 Scopus citations

Abstract

We investigated copper oxides for use as an active layer of p-channel field-effect thin-film transistors (TFTs). Cu₂ O thin films deposited at room temperature using rf magnetron sputtering were transformed to a CuO phase after an annealing treatment in air above 200 °C. The optical bandgaps of the Cu₂ O and CuO were 2.44 and 1.41 eV, respectively. The bottom gate structured TFTs fabricated using CuO active layers operated in a p-type enhancement mode with an on/off ratio of ∼ 10⁴ and field-effect mobility of 0.4 cm² /V·s.

Original language	English
Article number	222109
Journal	Applied Physics Letters
Volume	97
Issue number	22
DOIs	https://doi.org/10.1063/1.3521310
State	Published - 29 Nov 2010

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title = "Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature",

abstract = "We investigated copper oxides for use as an active layer of p-channel field-effect thin-film transistors (TFTs). Cu2 O thin films deposited at room temperature using rf magnetron sputtering were transformed to a CuO phase after an annealing treatment in air above 200 °C. The optical bandgaps of the Cu2 O and CuO were 2.44 and 1.41 eV, respectively. The bottom gate structured TFTs fabricated using CuO active layers operated in a p-type enhancement mode with an on/off ratio of ∼ 104 and field-effect mobility of 0.4 cm2 /V·s.",

author = "Sung, \{Sang Yun\} and Kim, \{Se Yun\} and Jo, \{Kwang Min\} and Lee, \{Joon Hyung\} and Kim, \{Jeong Joo\} and Kim, \{Sang Gon\} and Chai, \{Kyoung Hoon\} and Pearton, \{S. J.\} and Norton, \{D. P.\} and Heo, \{Young Woo\}",

year = "2010",

month = nov,

day = "29",

doi = "10.1063/1.3521310",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

AU - Sung, Sang Yun

AU - Kim, Se Yun

AU - Jo, Kwang Min

AU - Lee, Joon Hyung

AU - Kim, Jeong Joo

AU - Kim, Sang Gon

AU - Chai, Kyoung Hoon

AU - Pearton, S. J.

AU - Norton, D. P.

AU - Heo, Young Woo

PY - 2010/11/29

Y1 - 2010/11/29

N2 - We investigated copper oxides for use as an active layer of p-channel field-effect thin-film transistors (TFTs). Cu2 O thin films deposited at room temperature using rf magnetron sputtering were transformed to a CuO phase after an annealing treatment in air above 200 °C. The optical bandgaps of the Cu2 O and CuO were 2.44 and 1.41 eV, respectively. The bottom gate structured TFTs fabricated using CuO active layers operated in a p-type enhancement mode with an on/off ratio of ∼ 104 and field-effect mobility of 0.4 cm2 /V·s.

AB - We investigated copper oxides for use as an active layer of p-channel field-effect thin-film transistors (TFTs). Cu2 O thin films deposited at room temperature using rf magnetron sputtering were transformed to a CuO phase after an annealing treatment in air above 200 °C. The optical bandgaps of the Cu2 O and CuO were 2.44 and 1.41 eV, respectively. The bottom gate structured TFTs fabricated using CuO active layers operated in a p-type enhancement mode with an on/off ratio of ∼ 104 and field-effect mobility of 0.4 cm2 /V·s.

UR - https://www.scopus.com/pages/publications/78650653090

U2 - 10.1063/1.3521310

DO - 10.1063/1.3521310

M3 - Article

AN - SCOPUS:78650653090

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222109

ER -

Fabrication of p-channel thin-film transistors using CuO active layers deposited at low temperature

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