Abstract
SnO2 nanowire networks were synthesized in two steps. Sn spheres (30–800 nm in diameter) embedded in SiO2 on a Si substrate was synthesized by a chemical vapor deposition method at 700°C. Using the source of these Sn spheres, SnO2 nanowire (20–40 nm in diameter; 1–10 μm in length) networks on a spherical Sn surface were synthesized by a thermal oxidation method at 800°C through the support of gold. Field emission scanning electron microscopy and high-resolution transmission electron microscopy images indicated that SnO2 nanowires are single crystalline. In addition, the SnO2 nanowire is also a tetragonal rutile, with the preferred growth directions along [100] and a lattice spacing of 0.237 nm. Subsequently, the NO2 sensing properties of the SnO2 network nanowires sensor at an operating temperature of 50–250°C were examined, and showed a reversible response to NO2 at various NO2 concentrations. Finally, a possible formation mechanism of Sn spheres and SnO2 nanowire networks is also discussed.
Original language | English |
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Pages (from-to) | 6070-6077 |
Number of pages | 8 |
Journal | Journal of Electronic Materials |
Volume | 46 |
Issue number | 10 |
DOIs | |
State | Published - 1 Oct 2017 |
Keywords
- chemical vapor deposition
- Sn spheres
- SnO nanowire networks
- thermal oxidation