TY - GEN
T1 - Fabrication of superhydrophobic surface using surface texturing with nano-sized structure and PTFE film
AU - Oh, Junghwa
AU - Kong, Daeyoung
AU - Seo, Sungbo
AU - Kim, Dongyoung
AU - Kim, Hwamin
AU - Cho, Chanseob
AU - Lee, Jonghyun
AU - Kim, Bonghwan
PY - 2012
Y1 - 2012
N2 - We developed a superhydrophobic surface using surface texturing with nano-sized structure and polytetrafluoroethylene (PTFE) film deposition. The properties of superhydrophobic surface were investigated using water contact angle, root mean square (RMS) roughness, and X-ray photoelectron spectroscopy (XPS). The contact angle of a water droplet was greater than 150°, which means extremely low wettability is achievable on superhydrophobic surfaces. For nano-sized structure, we carried out two step etching process using reactive ion etching (RIE) in a large pyramid substrate by potassium hydroxide (KOH) solution. Metal mesh installed RIE etched silicon substrate using SF6 and O2 gas. PTFE films were deposited by conventional RF magnetron sputtering. This process is applicable for stable superhydrophobic and self-cleaning surfaces due to hierarchical structures formed silicon wafer etched by RIE technique.
AB - We developed a superhydrophobic surface using surface texturing with nano-sized structure and polytetrafluoroethylene (PTFE) film deposition. The properties of superhydrophobic surface were investigated using water contact angle, root mean square (RMS) roughness, and X-ray photoelectron spectroscopy (XPS). The contact angle of a water droplet was greater than 150°, which means extremely low wettability is achievable on superhydrophobic surfaces. For nano-sized structure, we carried out two step etching process using reactive ion etching (RIE) in a large pyramid substrate by potassium hydroxide (KOH) solution. Metal mesh installed RIE etched silicon substrate using SF6 and O2 gas. PTFE films were deposited by conventional RF magnetron sputtering. This process is applicable for stable superhydrophobic and self-cleaning surfaces due to hierarchical structures formed silicon wafer etched by RIE technique.
UR - https://www.scopus.com/pages/publications/84873945142
U2 - 10.1109/ICSENS.2012.6411450
DO - 10.1109/ICSENS.2012.6411450
M3 - Conference contribution
AN - SCOPUS:84873945142
SN - 9781457717659
T3 - Proceedings of IEEE Sensors
BT - IEEE SENSORS 2012 - Proceedings
T2 - 11th IEEE SENSORS 2012 Conference
Y2 - 28 October 2012 through 31 October 2012
ER -