@inproceedings{0269cff1812e4fe4ad9283b15a29beef,
title = "Fabrication of ZnO/GaN hybrid light-emitting diodes",
abstract = "We report on the fabrication of UV light-emitting diodes (LEDs) based on a p-n junction n-ZnMgO/n-ZnO/p-AlGaN/p-GaN semiconductor triple-heterostructure. Radio-frequency plasma-assisted molecular beam epitaxy was used to grow the complete heterostructure on p-AlGaN/p-GaN c-plane sapphire templates. The LEDs were fabricated by a process involving both wet and dry etching. Electroluminescence emission most likely associated with ZnO excitonic transition was observed up to 370°C. The results show the potential of ZnO-based materials for UV emitters of potentially lower cost and with comparable or higher emission intensity than comparable AlGaN/GaN devices.",
author = "Han, {Sang Youn} and Yang, {H. S.} and Heo, {Y. W.} and Baik, {K. H.} and Norton, {D. P.} and Pearton, {S. J.} and F. Ren and A. Osinsky and Dong, {J. W.} and B. Hertog and Dabiran, {A. M.} and Chow, {P. P.} and L. Chemyak and T. Steiner and Kao, {C. J.} and Chi, {G. C.}",
year = "2006",
language = "English",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "58--63",
booktitle = "State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI",
address = "United States",
edition = "2",
note = "43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society ; Conference date: 16-10-2005 Through 21-10-2005",
}