Fe-doping effect on thermoelectric properties of p-type Bi0.48Sb1.52Te3

Hyeona Mun; Kyu Hyoung Lee; Suk Jun Kim; Jong Young Kim; Jeong Hoon Lee; Jae Hong Lim; Hee Jung Park; Jong Wook Roh; Sung Wng Kim

doi:10.3390/ma8030959

Fe-doping effect on thermoelectric properties of p-type Bi_0.48Sb_1.52Te₃

Hyeona Mun, Kyu Hyoung Lee, Suk Jun Kim, Jong Young Kim, Jeong Hoon Lee, Jae Hong Lim, Hee Jung Park, Jong Wook Roh, Sung Wng Kim

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27 Scopus citations

Abstract

The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi₂Te₃-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi_0.48Sb_1.52Te₃. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb) and dopants (Fe). An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi_0.48Sb_1.52Te₃ by these synergetic effects.

Original language	English
Pages (from-to)	959-965
Number of pages	7
Journal	Materials
Volume	8
Issue number	3
DOIs	https://doi.org/10.3390/ma8030959
State	Published - 2015

Keywords

BiTe
Doping
Lattice thermal conductivity
Raw material
Thermoelectric

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title = "Fe-doping effect on thermoelectric properties of p-type Bi0.48Sb1.52Te3",

abstract = "The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi2Te3-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi0.48Sb1.52Te3. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb) and dopants (Fe). An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi0.48Sb1.52Te3 by these synergetic effects.",

keywords = "BiTe, Doping, Lattice thermal conductivity, Raw material, Thermoelectric",

author = "Hyeona Mun and Lee, {Kyu Hyoung} and Kim, {Suk Jun} and Kim, {Jong Young} and Lee, {Jeong Hoon} and Lim, {Jae Hong} and Park, {Hee Jung} and Roh, {Jong Wook} and Kim, {Sung Wng}",

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doi = "10.3390/ma8030959",

language = "English",

volume = "8",

pages = "959--965",

journal = "Materials",

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T1 - Fe-doping effect on thermoelectric properties of p-type Bi0.48Sb1.52Te3

AU - Mun, Hyeona

AU - Lee, Kyu Hyoung

AU - Kim, Suk Jun

AU - Kim, Jong Young

AU - Lee, Jeong Hoon

AU - Lim, Jae Hong

AU - Park, Hee Jung

AU - Roh, Jong Wook

AU - Kim, Sung Wng

PY - 2015

Y1 - 2015

N2 - The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi2Te3-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi0.48Sb1.52Te3. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb) and dopants (Fe). An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi0.48Sb1.52Te3 by these synergetic effects.

AB - The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi2Te3-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi0.48Sb1.52Te3. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb) and dopants (Fe). An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi0.48Sb1.52Te3 by these synergetic effects.

KW - BiTe

KW - Doping

KW - Lattice thermal conductivity

KW - Raw material

KW - Thermoelectric

UR - http://www.scopus.com/inward/record.url?scp=84930505717&partnerID=8YFLogxK

U2 - 10.3390/ma8030959

DO - 10.3390/ma8030959

M3 - Article

AN - SCOPUS:84930505717

SN - 1996-1944

VL - 8

SP - 959

EP - 965

JO - Materials

JF - Materials

IS - 3

ER -

Fe-doping effect on thermoelectric properties of p-type Bi_0.48Sb_1.52Te₃

Abstract

Keywords

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