Fe-doping effect on thermoelectric properties of p-type Bi0.48Sb1.52Te3

  • Hyeona Mun
  • , Kyu Hyoung Lee
  • , Suk Jun Kim
  • , Jong Young Kim
  • , Jeong Hoon Lee
  • , Jae Hong Lim
  • , Hee Jung Park
  • , Jong Wook Roh
  • , Sung Wng Kim

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

The substitutional doping approach has been shown to be an effective strategy to improve ZT of Bi2Te3-based thermoelectric raw materials. We herein report the Fe-doping effects on electronic and thermal transport properties of polycrystalline bulks of p-type Bi0.48Sb1.52Te3. After a small amount of Fe-doping on Bi/Sb-sites, the power factor could be enhanced due to the optimization of carrier concentration. Additionally, lattice thermal conductivity was reduced by the intensified point-defect phonon scattering originating from the mass difference between the host atoms (Bi/Sb) and dopants (Fe). An enhanced ZT of 1.09 at 300 K was obtained in 1.0 at% Fe-doped Bi0.48Sb1.52Te3 by these synergetic effects.

Original languageEnglish
Pages (from-to)959-965
Number of pages7
JournalMaterials
Volume8
Issue number3
DOIs
StatePublished - 2015

Keywords

  • BiTe
  • Doping
  • Lattice thermal conductivity
  • Raw material
  • Thermoelectric

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