Field activated lateral-type polysilicon emitter with extremely high emission current and very low turn-on voltage

Jae Hoon Lee; Myoung Bok Lee; Sung Ho Hahm; Hyun Chul Choi; Jong Hyun Lee; Jung Hee Lee; Jin Sup Kim; Kyu Man Choi; Chang Auck Choi

doi:10.1116/1.1371017

Field activated lateral-type polysilicon emitter with extremely high emission current and very low turn-on voltage

Jae Hoon Lee, Myoung Bok Lee, Sung Ho Hahm, Hyun Chul Choi, Jong Hyun Lee, Jung Hee Lee, Jin Sup Kim, Kyu Man Choi, Chang Auck Choi

School of Electronics Engineering

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

The fabrication of polysilicon field emission device was studied using local oxidation of silicon (LOCOS) process. Thermal treatment, high field shock and hydrogen treatment process were used to achieve stable and high emission current. It was found that fabricated single field emitter exhibits excellent electrical characteristics due to increased enhancement factor by appropriate activation and sharpened tips by the LOCOS process.

Original language	English
Pages (from-to)	1055-1058
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	19
Issue number	3
DOIs	https://doi.org/10.1116/1.1371017
State	Published - May 2001
Event	13th International Vaccum Microelectronics Conference - Guangzhou, China Duration: 14 Aug 2000 → 17 Aug 2000

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Lee, J. H., Lee, M. B., Hahm, S. H., Choi, H. C., Lee, J. H., Lee, J. H., Kim, J. S., Choi, K. M., & Choi, C. A. (2001). Field activated lateral-type polysilicon emitter with extremely high emission current and very low turn-on voltage. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19(3), 1055-1058. https://doi.org/10.1116/1.1371017

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title = "Field activated lateral-type polysilicon emitter with extremely high emission current and very low turn-on voltage",

abstract = "The fabrication of polysilicon field emission device was studied using local oxidation of silicon (LOCOS) process. Thermal treatment, high field shock and hydrogen treatment process were used to achieve stable and high emission current. It was found that fabricated single field emitter exhibits excellent electrical characteristics due to increased enhancement factor by appropriate activation and sharpened tips by the LOCOS process.",

author = "Lee, {Jae Hoon} and Lee, {Myoung Bok} and Hahm, {Sung Ho} and Choi, {Hyun Chul} and Lee, {Jong Hyun} and Lee, {Jung Hee} and Kim, {Jin Sup} and Choi, {Kyu Man} and Choi, {Chang Auck}",

year = "2001",

month = may,

doi = "10.1116/1.1371017",

language = "English",

volume = "19",

pages = "1055--1058",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "3",

note = "13th International Vaccum Microelectronics Conference ; Conference date: 14-08-2000 Through 17-08-2000",

}

Field activated lateral-type polysilicon emitter with extremely high emission current and very low turn-on voltage. / Lee, Jae Hoon; Lee, Myoung Bok; Hahm, Sung Ho et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 19, No. 3, 05.2001, p. 1055-1058.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Field activated lateral-type polysilicon emitter with extremely high emission current and very low turn-on voltage

AU - Lee, Jae Hoon

AU - Lee, Myoung Bok

AU - Hahm, Sung Ho

AU - Choi, Hyun Chul

AU - Lee, Jong Hyun

AU - Lee, Jung Hee

AU - Kim, Jin Sup

AU - Choi, Kyu Man

AU - Choi, Chang Auck

PY - 2001/5

Y1 - 2001/5

N2 - The fabrication of polysilicon field emission device was studied using local oxidation of silicon (LOCOS) process. Thermal treatment, high field shock and hydrogen treatment process were used to achieve stable and high emission current. It was found that fabricated single field emitter exhibits excellent electrical characteristics due to increased enhancement factor by appropriate activation and sharpened tips by the LOCOS process.

AB - The fabrication of polysilicon field emission device was studied using local oxidation of silicon (LOCOS) process. Thermal treatment, high field shock and hydrogen treatment process were used to achieve stable and high emission current. It was found that fabricated single field emitter exhibits excellent electrical characteristics due to increased enhancement factor by appropriate activation and sharpened tips by the LOCOS process.

UR - http://www.scopus.com/inward/record.url?scp=0035326321&partnerID=8YFLogxK

U2 - 10.1116/1.1371017

DO - 10.1116/1.1371017

M3 - Conference article

AN - SCOPUS:0035326321

SN - 1071-1023

VL - 19

SP - 1055

EP - 1058

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 3

T2 - 13th International Vaccum Microelectronics Conference

Y2 - 14 August 2000 through 17 August 2000

ER -

Field activated lateral-type polysilicon emitter with extremely high emission current and very low turn-on voltage

Abstract

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